mai
08
2014
By intranet
Prof. Lucy Assali investigate the eletronic properties of lanthanide impurities (from Eu to Tm) in wurtzite gallium nitride and zinc oxide in a collaboration paper between the Institute of Physics and the Polytechnic School of the University of São Paulo. The first principles calculations results indicated that the 4f-related energy levels remain outside the bandgap in both materials. Furthermore, the observed coupling between the 4f-related spin polarized states and the carriers may generate spin polarized currents, which could lead to applications in spintronic devices.
"Lanthanide impurities in wide bandgap semiconductors: A possible roadmap for spintronic devices"
Appl. Phys. Lett. 102, 0621o1 (2013)
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