In collaboration with the Institute of Semiconductor Physics from Russia, Prof. Gennady Gusev studied the quantized transport in HgTe wells with inverted band structure corresponding to the two-dimensional topological insulator phase (2D TI) with locally controlled density allowing n-p-n and n-2D TI-n junctions.
A neutron diffraction study by Prof. Renato F. Jardim in collaboration with UNICAMP, NIST and the San Diego State University determined the magnetic properties of the Sr2YRuO6 system. The data revealed planar magnetic correlations that condense into a partial long-range ordered state with coupled alternate antiferromagnetic YRuO4 square layers coexisting with the short-range correlations.
Prof. Lucy Assali investigate the eletronic properties of lanthanide impurities (from Eu to Tm) in wurtzite gallium nitride and zinc oxide in a collaboration paper between the Institute of Physics and the Polytechnic School of the University of São Paulo. The first principles calculations results indicated that the 4f-related energy levels remain outside the bandgap in both materials.
A new scanning probe microscope (SPM), model ICON from Bruker, was recently installed (March 19, 2013) at the New Semiconductor Materials Laboratory (LNMS) of the Solid-State Department (DFMT). The system is able to measure large wafers with a diameter up to 6", and is equiped with the atomic force, magnetic force, electrical force, scanning tunneling, and surface potential (Kelvin) modes.
The article "Bilayer graphene on h-BN substrate:
From the new Landolt-Börnstein series, Springer release the Semiconductors volume III-44e by DFMT author Profª Euzi Conceição Fernandes da Silva. This book is co-authored by D. Strauch and edited by U. Rössler.
The Landolt-Börnstein Database is the world’s largest resource for physical and chemical data.
A new electron-beam deposition system, model NEXDEP from Angstrom Engineering, fully automated (vacuum and deposition functions), having six 7cc pockets and a 6 kW power supply, was recently installed (May 15, 2013) in the New Semiconductor Materials Laboratory (LNMS) of the DFMT.
A new mask aligner, model 206IR from OAI, was recently installed (June 10, 2013) at the New Semiconductor Materials Laboratory (LNMS) of the DFMT. The system is able to handle 6" wafers and can operate in soft, hard or vacuum mode, using front or backside illumination (with infrared radiation). It was installed in a clean and yellow room, and will be used for optical lithography with a resolution down to 1 um, in order to p
TWAS Members Elected
Prof. Adalberto Fazzio was elected Fellow of The World Academy of Sciencies for the Advancement of Science in Developing Countries (TWAS). The election took place at the Academy's 24th General Meeting in Buenos Aires, Argentina, on Tuesday, 1 October 2013
Read more in Revista FAPESP (http://agencia.fapesp.br/17996)
In a recent publication in Physical Review B Rapid Communications, the first experimental observation of the spin Hall effect in a high-mobility two-dimensional electron gas was reported. The study was completely developed in the LNMS at DFMT-IFUSP by Prof. Felix Hernandez, Prof. Gennady Gusev and Leonardo Nunes (M.Sc. student).