A possible roadmap for spintronic devices in wide bandgap semiconductors
Prof. Lucy Assali investigate the eletronic properties of lanthanide impurities (from Eu to Tm) in wurtzite gallium nitride and zinc oxide in a collaboration paper between the Institute of Physics and the Polytechnic School of the University of São Paulo. The first principles calculations results indicated that the 4f-related energy levels remain outside the bandgap in both materials.
O professor Ronaldo Rodrigues Pelá, do Departamento de Física do ITA, foi premiado na Conferência Internacional de Física de Semicondutores (ICPS) ocorrida de 29/07 a 03/08 no ETH em Zurique.

In a recent publication in Physical Review B Rapid Communications, the first experimental observation of the spin Hall effect in a high-mobility two-dimensional electron gas was reported. The study was completely developed in the LNMS at DFMT-IFUSP by Prof. Felix Hernandez, Prof. Gennady Gusev and Leonardo Nunes (M.Sc. student).