Destaque na Revista Advanced Materials
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Artigo da Professora Maria Cristina dos Santos é escolhido como capa da revista Advanced Materials. |
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Artigo da Professora Maria Cristina dos Santos é escolhido como capa da revista Advanced Materials. |
Uma nova área de pesquisa em materiais 2D tem explorado a combinação destes materiais
em heteroestruturas verticais chamadas de cristais de van der Waals. Um trabalho
realizado por membros do DFMT, com o objetivo de obter novas propriedades a partir do
empilhamento apropriado, foi publicado Phys. Rev. Lett. e obteve destaque na segunda
edição do BIFUSP.
Read more:
van der Waals Heterostructure of Phosphorene and Graphene:
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A new class of nonequilibrium phenomena is expected when a low-dimensional electron gas, subjected to a weak magnetic field, is also irradiated with microwaves. In a recent publication, an experimental work in the LNMS at DFMT-IFUSP provides evidence for an edge-state current stabilized by microwave irradiation.
“ Microwave-induced nonlocal transport in a two-dimensional electron system”
Faculty Position Opening
University of São Paulo / Institute of Physics
Department of Materials Physics and Mechanics
Rank: Assistant Professor (Permanent Position)

Trabalho publicado por Leandro Seixas, Adalberto Fazzio, S.B. Zhang e D. West na
"Nature Comunications" em 03 de Julho .
The Third Mário Schenberg Meeting of the Department of Mechanics and Materials Physics took place on December 11, 2013, at the Institute of Physics. In the event was honored the career of late Prof. José Roberto Leite, through participation and testimonials from former students and research collaborators, who shared his brilliant career. Emphasis was given to his academic activity, and to the key role played by Prof.
TWAS Members Elected
Prof. Adalberto Fazzio was elected Fellow of The World Academy of Sciencies for the Advancement of Science in Developing Countries (TWAS). The election took place at the Academy's 24th General Meeting in Buenos Aires, Argentina, on Tuesday, 1 October 2013
Read more in Revista FAPESP (http://agencia.fapesp.br/17996)
A new mask aligner, model 206IR from OAI, was recently installed (June 10, 2013) at the New Semiconductor Materials Laboratory (LNMS) of the DFMT. The system is able to handle 6" wafers and can operate in soft, hard or vacuum mode, using front or backside illumination (with infrared radiation). It was installed in a clean and yellow room, and will be used for optical lithography with a resolution down to 1 um, in order to p