| 1. | ALVES, J L A ; LEITE, J. R. . Self-Consistent One-Electron States of Substitutional and Interstitial 5d-Transition Atom Impurities in Silicon. Physical Review B - Condensed Matter and Materials Physics, v. 34, p. 7174, 1986. [ citações google scholar | busca google ] |
| 2. | ASSALI, L V C ; LEITE, J. R. . Comment on the Assali and Leite preceeding paper: Microscopic Mechanism of Hydrogen Passivation of Acceptor Shallow Levels in Silicon by DeLeo and Fowler. Physical Review Letters, v. 56, p. 403, 1986. [ citações google scholar | busca google ] |
| 3. | ASSALI, L V C ; LEITE, J. R. . Electronic Structure of the Au-Mn Pair Complex in Silicon. Solid State Communications, v. 58, p. 577, 1986. [ citações google scholar | busca google ] |
| 4. | ASSALI, L V C ; LEITE, J. R. . Theoretical Model of Transition Metal-Shallow Acceptor Impurity pairs in Silicon. Materials Science Forum, Zurique, v. 10-12, p. 55, 1986. [ citações google scholar | busca google ] |
| 5. | CALDAS, M. J. ; FIGUEIREDO, S. ; FAZZIO, A. . Theoretical Investigation of the Electrical and Optical-Activity of Vanadium in GaAs. Physical Review B - Solid State, v. 33, p. 7102-7109, 1986.  [ citações google scholar | busca google ] |
| 6. | CANUTO, S. ; FAZZIO, A. . Many-Electron Treatment of the Off-Center Substitutional O in Si. Physical Review B - Solid State, v. R33, p. 4432, 1986. [ citações google scholar | busca google ] |
| 7. | CHACHAM, H ; ALVES, J L A ; LEITE, J. R. ; SIQUEIRA, M L de . The Noble Gas Atoms as Impurities in Silicon. International Journal of Quantum Chemistry, v. S20, p. 347, 1986. [ citações google scholar | busca google ] |
| 8. | CONFORTO, E. ; RECHENBERG, H. R. ; JAFELICCI JR, M. . Mössbauer spectroscopic study of the early crystallization stage of iron (III) hydroxide particles. Journal of Physics and Chemistry of Solids, v. 47, p. 1179-1184, 1986. [ citações google scholar | busca google ] |
| 9. | FERRAZ, A. C. ; SRIVASTAVA, G P . The Atomic Geometry of ZnSe(110): Determinations by Total Energy Method. Journal of Physics. Condensed Matter, v. 19, p. 5987-5994, 1986. [ citações google scholar | busca google ] |
| 10. | FERRAZ, A. C. ; SRIVASTAVA, G P . The Electronic Band Structure of (GaAs)n(AlAs)n Superlattices. Semiconductor Science and Technology, v. 1, p. 169-171, 1986. [ citações google scholar | busca google ] |
| 11. | GOMES, V M S ; ASSALI, L V C ; LEITE, J. R. . Ab initio MO Electronic Structure Calculations of Defect-Pair Complexes in Silicon. International Journal of Quantum Chemistry, v. S20, p. 749, 1986. [ citações google scholar | busca google ] |
| 12. | GOMES, V M S ; LEITE, J. R. . Theoretical Investigation of Deep Level Complexes Related Carbon and Oxygen Impurities in Silicon. Materials Science Forum, Zurique, v. 10-12, p. 905, 1986. [ citações google scholar | busca google ] |
| 13. | LEITE, J. R. ; OLIVEIRA, G M G ; GOMES, V M S ; CHAVES, A S . The Behavior of Carriers in Quantum Wells in GaAs-AlxGa1-xAs Superlattices Under in-Plane Magnetic Fields. International Journal of Quantum Chemistry, v. S20, p. 335, 1986. [ citações google scholar | busca google ] |
| 14. | MAKIUCHI, N. ; FAZZIO, A. ; CALDAS, M. J. . Excitation and Ionization of Mo and W in GaAs. Physical Review B - Solid State, v. 34, p. 2690-2694, 1986. [ citações google scholar | busca google ] |
| 15. | MOTISUKE, P. ; IIKAWA, F. ; CALDAS, M. J. ; FAZZIO, A. ; PEREIRA NETO, J. R. . On the Evidence for the Effect of Local Symmetry on the Photoionization Spectrum of Fe2+ in InP. Materials Science (Kaunas University of Technology), v. 10-12, p. 687, 1986. [ citações google scholar | busca google ] |
| 16. | PADUAN FILHO, ; S, D. M. ; Becerra CC . Magnetic Transitions In The Intermediate Anisotropic Antiferromagnetic Rb Indice 2 Mnbr Indice 4 Vezes 2h Indice 2 O. J. MAG. MAG. MAT. , v. 54-55, p. 699-99999, 1986. [ citações google scholar | busca google ] |
| 17. | PADUANFILHO A. ; DROICHE, M. S. ; BECERRA, C. C. . Magnetic Transitions In The Intermediate Anisotropic Antiferromagnet Rb2MnBr4. 2H2O. Journal of Magnetism and Magnetic Materials, v. 54, p. 699-700, 1986. [ citações google scholar | busca google ] |
| 18. | RECHENBERG, H. R. ; PADUANFILHO A. ; MISSEL, F. P. ; PEPPE, P. ; ROSENBERG, M. . Magnetic Properties And Mossbauer Effect In R5Fe18B18. Solid State Communications, v. 59, p. 541-543, 1986. [ citações google scholar | busca google ] |
| 19. | RECHENBERG, H. R. ; PADUAN FILHO, A. ; MISSELL, F. P. ; DEPPE, P. ; ROSENBERG, M. . Magnetic properties and Mössbauer effect in R5Fe18B18 (R1+eFe4B4). Solid State Communications, v. 59, p. 541-543, 1986. [ citações google scholar | busca google ] |
| 20. | SCOLFARO, L M R ; PINTANEL, R ; GOMES, V M S ; LEITE, J. R. ; CHAVES, A S . Impurity Levels Induced by a C impurity in GaAs. Physical Review B - Condensed Matter and Materials Physics, v. 34, p. 7135, 1986. [ citações google scholar | busca google ] |
| 21. | SHAPIRA, Y. ; OLIVEIRA Jr. , N. F. ; RIDGLEY, D. H. ; KERSHAW, R. ; DWIGHT, K. ; WOLD, A. . Magneto Resistance and Hall Effect Near the Metal-Insulator Transiti on of Cd Indice 1-X Mn Indice X Se. PHYS. REV. B. , v. 34, p. 4187-99999, 1986. [ citações google scholar | busca google ] |
