Doutorado e Pós-Doc em 2D semiconductor – 2D dielectric interfacing

Tipo de Oportunidade: 
Bolsa
Instituição: 
Montanuniversität Leoben

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We are seeking motivated and curiosity driven people looking to expand their knowledge in the fields of:
• 2D materials,
• Interface engineering,
• nanoelectronics,
• crystal growth, and
• heteroepitaxy.
 
The topics of the available PhD thesis and the postdoctoral position are related to 2D semiconductor – 2D dielectric interfacing for future electronics. The candidates are expected to adopt and further develop the CVD-based growth setup with the goals of achieving
2D semiconductor (MoS2, WS2, WSe2, PtSe2, etc) heteroepitaxy on layered phyllosilicate insulators and growth of thin film phyllosilicates; following structural characterization (AFM, Raman, XRD, XPS, EPMA, STEM), device integration, and electrical characterization.
 
  • PhD candidate position: 30 h/week; 3 years – background (MSc or equivalent) in materials science, materials for electronics, nanoelectronics;
  • Postdoc position: 40 h/week; 2 years – preferably with a PhD in 2D materials, crystal growth, CVD, nanoelectronics;
 
Our group is situated at Montanuniversität Leoben in Styria, Austria, surrounded by Austrian Alps, with a nearby local ski centre, and many outdoors activity opportunities. The town is located c.a. 45 min from Graz, and 2 h from Vienna.
 
More info on our group:
 
Interested candidates, please directly contact:
Priv.-Doz. Dr Aleksandar Matkovic, Senior Group Leader
 

Desenvolvido por IFUSP