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The Quantum Hall Effect in Topological Insulator-n Junctions x

In collaboration with the Institute of Semiconductor Physics from Russia, Prof. Gennady Gusev studied the quantized transport in HgTe wells with inverted band structure corresponding to the two-dimensional topological insulator phase (2D TI) with locally controlled density allowing n-p-n and n-2D TI-n junctions.

Research Highlight from the Superconductivity Group

A neutron diffraction study by Prof. Renato F. Jardim in collaboration with UNICAMP, NIST and the San Diego State University determined the magnetic properties of the Sr2YRuO6 system. The data revealed planar magnetic correlations that condense into a partial long-range ordered state with coupled alternate antiferromagnetic YRuO4 square layers coexisting with the short-range correlations.

A possible roadmap for spintronic devices in wide bandgap semiconductors

Prof. Lucy Assali investigate the eletronic properties of lanthanide impurities (from Eu to Tm) in wurtzite gallium nitride and zinc oxide in a collaboration paper between the Institute of Physics and the Polytechnic School of the University of São Paulo. The first principles calculations results indicated that the 4f-related energy levels remain outside the bandgap in both materials.

New SPM at LNMS

A new scanning probe microscope (SPM), model ICON from Bruker, was recently installed (March 19, 2013) at the New Semiconductor Materials Laboratory (LNMS) of the Solid-State Department (DFMT).  The system is able to measure large wafers with a diameter up to 6", and is equiped with the atomic force, magnetic force, electrical force, scanning tunneling, and surface potential (Kelvin) modes.

New mask aligner system at LNMS

A new mask aligner, model 206IR from OAI, was recently installed (June 10, 2013) at the New Semiconductor Materials Laboratory (LNMS) of the DFMT.  The system is able to handle 6" wafers and can operate in soft, hard or vacuum mode, using front or backside illumination (with infrared radiation).  It was installed in a clean and yellow room, and will be used for optical lithography with a resolution down to 1 um, in order to p

Prof. Adalberto Fazzio was elected Fellow of The World Academy of Sciencies for the Advancement of Science in Developing Countries

TWAS Members Elected
Prof. Adalberto Fazzio was elected Fellow of The World Academy of Sciencies for the Advancement of Science in Developing Countries (TWAS).  The election took place at the Academy's 24th General Meeting in Buenos Aires, Argentina, on Tuesday, 1 October 2013


Read more in Revista FAPESP (http://agencia.fapesp.br/17996)

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