Molecular Beam Epitaxy Group (MBE)


   Our research group focus on the investigation of molecular beam epitaxy (MBE) growth techniques and optoelectronic devices such as infrared photodetectors, solar cells and quantum cascade lasers based on quantum wells and quantum dots of Ga, Al and In arsenides. The laboratory has complete infrastructure to grow, process and test these devices within its facilities. If you have interest in collaborating or using our facilities, please send your inquiries using the contact panel. Depending on the type of collaboration and services to be provided, the use of the facilities may be free or paid.