Articles

 

2024

Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers

Huang, T.-Y, Borrely, T, Yang, Y.-C, Alzeidan, A., Jacobsen, G.M., Teodoro, M.D., Quivy, A.A. and Goldman, R. S.

Appl. Phys. Lett., 125, 122108 (2024). DOI : 10.1063/5.0219815

High-performance infrared photodetector based on InAs/GaAs submonolayer quantum dots grown at high temperature with a (2×4) surface reconstruction

Alzeidan, A. Cantalice, T.F., Sautter, K.E., Vallejo, K.D., Simmonds, P.J. and Quivy, A.A.

Sens. Actuators A Phys., 374, 115464 (2024). DOI : 10.1016/j.sna.2024.115464

 

2023

Detection of Water Contaminants by Organic Transistors as Gas Sensors in a Bottom-Gate/Bottom-Contact Cross-Linked Structure.

Izquierdo, J.E.E., Cavallari, M.R., Garcia, D.C., Oliveira, J.D.S., Nogueira, V.A.M., Braga, G.S., Junior, O.H.A., Quivy, A.A., Kymissis, I. and Fonseca, F.J.

Sensors, 23, 7981 (2023). DOI : 10.3390/s23187981

Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction.

Borrely, T., Alzeidan, A., de Lima, M.D., Jacobsen, G.M., Huang, T.-Y., Yang, Y.-C., Cantalice, T.F., Goldman, R.S., Teodoro, M.D and Quivy, A. A.

Sol. Energy Mater Sol. Cells, 254, 112281 (2023). DOI : 10.1016/j.solmat.2023.112281

 

2022

Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots.

Gajjela, R.S.R., Hendriks, A.L., Alzeidan, A, Curbelo, V.M.O., Quivy, A.A. and Koenraad, P.M.

Physical Review Materials, 6(11), 114604 (2022). DOI : 10.1103/PhysRevMaterials.6.114604

 

Evidence of weak strain field in InAs/GaAs submonolayer quantum dots.

Cantalice, T.F., Alzeidan, A., Jacobsen, G.M., Borrely, T., Teodoro, M.D. and Quivy, A. A.

Micro and Nanostructures, 172, 207449 (2022). DOI : 10.1016/j.micrna.2022.207449

 

On the importance of atom probe tomography for the development of new nanoscale devices.

Borrely, T., Huang, T.Y., Yang, Y.C., Goldman, R.S. and Quivy, A. A.

2022 36th Symposium on Microelectronics Technology (SBMICRO). DOI : 10.1109/SBMICRO55822.2022.9881039

 

Capping of InAs quantum dots by migration enhanced epitaxy.

Curbelo, V.M.O., Alzeidan, A. and Quivy, A. A.

2022 36th Symposium on Microelectronics Technology (SBMICRO). DOI : 10.1109/SBMICRO55822.2022.9881016

 

Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors.

Alzeidan, A., Cantalice, T.F., Vallejo, K.D., Gajjela, R.S.R., Hendriks, A.L., Simmonds, P.J., Koenraad, P.M., and Quivy, A. A.

Sensors and Actuators A: Physical, 334, 113357 (2022). DOI : 10.1016/j.sna.2021.113357

 

2021

A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry.

Malafronte, A. A., Petri, A. R., Gonçalves, J. A. C., Barros, S. F., Bueno, C. C., Maidana, N. L., Mangiarotti, A., Martins, M. N., Quivy, A. A. and Vanin, V. R.

Radiation Physics and Chemistry 179, 109103 (2021). DOI: 10.1016/j.radphyschem.2020.109103

Magnetic and power tuning of spin-asymmetric multiple excitons in a GaAs quantum well.

Naranjo, A., Bragança¸ H., Jacobsen, G. M., de Morais, R. R. O., Dias, I. F. L., Quivy, A. A., Marques, G. E., Lopez-Richard, V. and Teodoro, M. D.

Physica E: Low-dimensional Systems and Nanostructures, 129, 114599 (2021). DOI: 10.1016/j.physe.2020.114599

 

Quantifying the effects of light trapping on GaAs solar cells. 

Borrely, T., de Lima, M. D. and Quivy, A. A.

2021 35th Symp. Microelectron. Technol. Devices (SBMicro), 2021, 1-4. DOI: 10.1109/SBMicro50945.2021.9585767

 

Influence of the InAs coverage on the performance oof submonolayer-quantum-dot infrared photodetectors grown with a (2x4) surface reconstruction.

Alzeidan, A., Cantalice, T. F., Vallejo, K. D., Simmonds, P. J. and Quivy, A. A.

2021 35th Symp. Microelectron. Technol. Devices (SBMicro), 2021, 1-4. DOI : 10.1109/SBMicro50945.2021.9585765


2020

Organic Dielectric Films for Flexible Transistors as Gas Sensors.

García, D. C., Izquierdo, J. E. E., Nogueira, V. A. M., Oliveira, J. D. S., Cavallari, M. R., Quivy A. A. and Fonseca, F. J.

Journal of Integrated Circuits and Systems 15(2), 1 (2020). DOI : 10.29292/jics.v15i2.170

Cross-sectional scanning tunneling microscopy of InAs/GaAs (001) submonolayer quantum dots.

Gajjela, R. S. R., Hendriks, A. L., Alzeidan, A., Cantalice, T. F., Quivy, A. A. and Koenraad, P. M.

Physical Review Materials 4, 114601 (2020). DOI : 10.1103/PhysRevMaterials.4.114601

Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors.

Claro, M. S., Stroppa, D. G., da Silva, E. C. F. and Quivy, A. A.

Sensors and Actuators A: Physical 315, 112262 (2020). DOI : 10.1016/j.sna.2020.112262

Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer.

Santos, T. G., Vieira, G. S., Delfino, C. A., Tanaka, R. Y., Abe, N. M., Passaro, A., Fernandes, F. M. and Quivy A. A.

Sensors and Actuators A: Physical 301, 111725 (2020). DOI : 10.1016/j.sna.2019.111725

Otimização de Células Solares de Heteroestruturas III-V Baseada em Dados Experimentais.

Borrely, T., Quivy, A. A., Pereira, A. L. J., da Silva Sobrinho, A. S., de Camargo, D. H. S. and Bufon, C. C. B.

VIII Congresso Brasileiro de Energia Solar (2020). DOI : Anais do Congresso

 

2019

Evaluation of Surface Recombination Velocity by Means of Computational Simulations and I×V Curves.

de Lima, M. D., Borrely, T and Quivy, A. A.

2019 34th Symp. on Microelec. Tech. and Dev. (SBMicro), Brazil (2019), pp. 1-3. DOI : 10.1109/SBMicro.2019.8919450

Realistic Simulations and Design of GaAs Solar Cells produced by Molecular Beam Epitaxy.

Borrely, T and Quivy, A. A.

2019 34th Symp. on Microelec. Tech. and Dev. (SBMicro), Brazil (2019), pp. 1-4. DOI : 10.1109/SBMicro.2019.8919412

Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector.

Alzeidan, A., Cantalice, T. F., Garcia, A. J., Deneke, C. F. and Quivy, A. A.

2019 34th Symp. on Microelec. Tech. and Dev. (SBMicro), Brazil (2019), pp. 1-4. DOI : 10.1109/SBMicro.2019.8919349

High-detectivity infrared photodetector based on InAs submonolayer quantum dots grown on GaAs(001) with a 2×4 surface reconstruction.

Alzeidan, A., Claro, M. S. and Quivy, A. A.

Journal of Applied Physics 126, 224506 (2019). DOI : 10.1063/1.5125238

In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots.

Cantalice, T. F. , Alzeidan, A. , Urahata, S. M. and Quivy, A. A.

Mater. Res. Express 6, p. 126205 (2019). DOI : 10.1088/2053-1591/ab55a8


2017

Simulation of the dark current of quantum-well infrared photodetectors.

Claro, M. S. ; Fernandes, F. M. ; da Silva, E. C. F. ; Quivy, A. A.

Superlattices and Microstructures 104 (4), 232 (2017). DOI : 10.1016/j.spmi.2017.02.015

Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells.

de Aquino, V. M.; Iwamoto, H.; Dias, I. F. L.; Laureto, E.; da Silva, M. A. T.; da Silva, E. C. F.; Quivy, A. A.

Superlattices and Microstructures 101, 236 (2017). DOI : 10.1016/j.spmi.2016.11.042

Effect of dopant segregation and negative differential mobility on multi-quantum well activation energy.

Pedroso, D. M.; Santos, T. G.; Delfino, C. A.; Vieira, G. S.; Fernandes, F. M.; Quivy, A. A.; Passaro, A.

Journal of Materials Science 52, 5223 (2017). DOI : 10.1007/s10853-017-0763-9


2016

Modeling the 3D In profile of InxGa1-xAs/GaAs quantum dots.

Tanaka, R. Y. ; Abe N. M.; da Silva, E. C. F.; Quivy, A. A.; Passaro, A.

J. Phys. D: Appl. Phys. 49 (2016) 215101. DOI : 10.1088/0022-3727/49/21/215101

Development of an analog and mixed-signal read-out circuit for long-wavelength infrared focal-plane arrays.

Claro, M. S.; Quivy, A. A.

2016 31st Symposium on Microelectronics Technology and Devices (SBMicro), Belo Horizonte, 2016, pp. 1-4. DOI : 10.1109/SBMicro.2016.7731352


2015

Computation of dark current in QWIPs using a modelling based on Ehrenfest theorem.

Pedroso, D. M.; Passaro, A.; Dacal, L. C. O.; Vieira, G. S.; da Silva, E. C. F. ; Quivy, A. A.

Journal of Physics. D, Applied Physics, v. 48, p. 365102, 2015. DOI : 10.1088/0022-3727/48/36/365102

Mid-infrared photodetection in an AlGaAs/GaAs quantum-well infrared photodetector using photoinduced noise.

Fernandes, F. M. ; da Silva, E. C. F. ; Quivy, A. A.

Journal of Applied Physics, v. 118, p. 204507, 2015. DOI : 10.1063/1.4936307


2014

Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells.

Armas, L.E.G. ; da Silva, E.C.F. ; Duarte, C.A. ; Pagnossin, I.R. ; Quivy, A. A. ; Menezes, J.W. ; Jacinto, C. ; Seabra, A. C. ; Gusev, G. M.

Physica. E, Low-Dimensional Systems and Nanostructures (Print), v. 61, p. 158-166, 2014. DOI : 10.1016/j.physe.2014.04.001

Modeling noise in superlattice quantum-well infrared photodetectors.

Fernandes, F M ; Claro, M S ; da Silva, E C F; Quivy, A. A.

Journal of Physics. D, Applied Physics (Print), v. 47, p. 385105, 2014. DOI : 10.1088/0022-3727/47/38/385105

2013

Influence of bimodal distribution and excited state emission on photoluminescence spectra of InAs self-assembled quantum dots.

Franchello, F.; de Souza, L. D.; Laureto, E; Quivy, A. A. ; Dias, I. F. L.; Duarte, J. L.

Journal of Luminescence, v. 137, p. 22-27, 2013. DOI : 10.1016/j.jlumin.2012.12.062

Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells.

Lopes, E. M. ; César, D. F. ; Franchello, F. ; Duarte, J .L. ; Dias, I. F. L. ; Laureto, E. ; Elias, D. C. ; Pereira, M. V. M. ; Guimarães, P. S. S. ; Quivy, A. A.

Journal of Luminescence, v. 144, p. 98-104, 2013. DOI : 10.1016/j.jlumin.2013.06.037

Simulation of the electronic properties of InxGa1−xAs quantum dots and their wetting layer under the influence of indium segregation.

Maia, A. D. B. ; da Silva, E. C. F. ; Quivy, A. A. ; Bindilatti, V. ; de Aquino, V. M. ; Dias, I. F. L.

Journal of Applied Physics, v. 114, p. 083708, 2013. DOI : 10.1063/1.4818610


2012

Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well.

Tabata, A. ; Oliveira, J. B. B. ; Pint’o, C. A. F.; da Silva, E. C. F. ; Lamas, T. E. ; Duarte, C. A. ; Gusev, G. M.

Physics Procedia, v. 28, p. 53-56, 2012. DOI : 10.1016/j.phpro.2012.03.670

The influence of different indium-composition profiles on the electronic structure of lens-shaped In.

Maia, A. D. B. ; da Silva, E. C. F. ; Quivy, A. A. ; Bindilatti, V. ; de Aquino, V. M. ; Dias, I. F. L.

Journal of Physics. D, Applied Physics (Print), v. 45, p. 225104, 2012. DOI : 10.1088/0022-3727/45/22/225104

Magnetophotoluminescence study of GaAs/AlGaAs coupled double quantum wells with bimodal heterointerface roughness.

Lopes, E. M. ; Duarte, J. L. ; Dias, I. F. L. ; Laureto, E. ; Guimarães, P. S. S. ; Subtil, A. G. S. ; Quivy, A. A.

Journal of Luminescence, v. 132, p. 1183-1187, 2012. DOI : 10.1016/j.jlumin.2011.12.065

Spin coherence generation in negatively charged self-assembled (In,Ga)As quantum dots by pumping excited trion states.

Henriques, A. B. ; Schwan, A. ; Varwig, S. ; Maia, A. D. B. ; Quivy, A. A. ; Yakovlev, D. R. ; Bayer, M.

Physical Review. B, Condensed Matter and Materials Physics, v. 86, p. 115333, 2012. DOI : 10.1103/PhysRevB.86.115333

Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing.

Keizer, J. G. ; Henriques, A. B. ; Maia, A. D. B. ; Quivy, A. A. ; Koenraad, P. M.

Applied Physics Letters, v. 101, p. 243113, 2012. DOI : 10.1063/1.4770371


2011

Dispersion of electron g-factor with optical transition energy in (In,Ga)As/GaAs self-assembled quantum dots.

Schwan, A. ; Meiners, B.-M. ; Henriques, A. B. ; Maia, A. D. B. ; Quivy, A. A. ; Spatzek, S. ; Varwig, S. ; Yakovlev, D. R. ; Bayer, M.

Applied Physics Letters, v. 98, p. 233102, 2011. DOI : 10.1063/1.3588413

Anisotropy of electron and hole g-factors in (In,Ga)As quantum dots.

Schwan, A. ; Meiners, B.-M. ; Greilich, A. ; Yakovlev, D. R. ; Bayer, M. ; Maia, A. D. B. ; Quivy, A. A. ; Henriques, A. B.

Applied Physics Letters, v. 99, p. 221914, 2011. DOI : 10.1063/1.3665634

Radioative Recombination Mechanisms of Large InAs/GaAs Quantum Dots.

Martini, S. ; Teles, L. K. ; Marques, M ; Marques, A. E. B. ; Quivy, A. A.

World Journal of Condensed Matter Physics, v. 01, p. 161-166, 2011. DOI : 10.4236/wjcmp.2011.14024

Fractional quantum Hall effect in second subband of a 2DES.

Duarte, C. A. ; Armas, L. E. G. ; da Silva, E. C. F. ; Gusev, G. M. ; Bakarov, A. K. ; Wiedmann, S. ; Portal, J. C. .

Europhysics Letters (Print), v. 94, p. 37010, 2011. DOI : 10.1209/0295-5075/94/37010


2010

Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method.

Martini, S. ; Manzoli, J. E. ; Quivy, A. A.

J Vac Sci Technol B Microelectron Nanometer Struct Process Meas Phenom, v. 28, p. 277, 2010. DOI : 10.1116/1.3301612

Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder.

Lopes, E.M. ; Duarte, J.L. ; Poças, L.C. ; Dias, I.F.L. ; Laureto, E. ; Quivy, A.A. ; Lamas, T.E.

Journal of Luminescence, v. 130, p. 460-465, 2010. DOI : 10.1016/j.jlumin.2009.10.013

Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs.

Morais, R. R. O. ; Dias, I. F. L. ; Duarte, J. L. ; Laureto, E. ; Lourenço, S. A. ; Silva, E. C. F. da ; Quivy, A. A.

Brazilian Journal of Physics (Impresso), v. 40, p. 15-21, 2010. DOI : 10.1590/S0103-97332010000100003

Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells.

Tabata, A ; Oliveira, J. B. B. ; da Silva, E. C. F.; Lamas, T. E. ; Duarte, C. A. ; Duarte, C. A. ; Gusev, G. M.

Journal of Physics. Conference Series (Online), v. 210, p. 012052, 2010. DOI : 10.1088/1742-6596/210/1/012052

2009

Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction.

Freitas, R. O. ; Quivy, A. A. ; Morelhão, S. L.

Journal of Applied Physics, v. 105, p. 036104, 2009. DOI : 10.1063/1.3074376

Effects of confinement on the electron phonon interaction in Al 0.18 Ga 0.82 As/GaAs quantum wells.

Morais, R. R. O. ; Dias, I. F. L. ; da Silva, M. A. T. ; Cesar, D. F. ; Duarte, J. L. ; Lourenço, S. A. ; Laureto, E. ; da Silva, E. C. F. ; Quivy, A. A

Journal of Physics. Condensed Matter, v. 21, p. 155601, 2009. DOI : 10.1088/0953-8984/21/15/155601

Classical and quantum magnetoresistance in a two-subband electron system.

Mamani, N. C. ; Gusev, G. M. ; da Silva, E. C. F. ; Raichev, O. E. ; Quivy, A. A. ; Bakarov, A. K.

Physical Review. B, Condensed Matter and Materials Physics, v. 80, p. 085304, 2009. DOI : 10.1103/PhysRevB.80.085304

Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction.

Freitas, R. O. ; Diaz, B. ; Abramof, E.; Quivy, A. A. ; Morelhão, S. L.

Physica Status Solidi. A, Applications and Materials Science (Print), v. 206, p. 1714-1717, 2009. DOI : 10.1002/pssa.200881605


2008

The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/Alx Ga1−xAs quantum wells.

da Silva, M. A. T. ; Morais, R. R. O. ; Dias, I. F. L. ; Lourenço, S. A. ; Duarte, J. L. ; Laureto, E. ; Quivy, A. A.; da Silva, E. C. F.

Journal of Physics. Condensed Matter, v. 20, p. 255246, 2008. DOI : 10.1088/0953-8984/20/25/255246

Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots.

Pagnossin, I. R. ; Meikap, A. K. ; Quivy, A. A. ; Gusev, G. M.

Journal of Applied Physics, v. 104, p. 073723, 2008. DOI : 10.1063/1.2996034


2007

Enhanced Hall slope in wide AlGaAs parabolic wells.

Zevellos, A. M. O. ; Mamani, N. C. ; Gusev, G. M. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Lamas, T. E. ; Portal, J.-C. .

Physical Review B – Condensed Matter and Materials Physics, v. 75, p. 205324, 2007. DOI : 10.1103/PhysRevB.75.205324

The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3um followed by photoreflectance spectroscopy.

Rudno-Rudzinski, W. ; Sek, G. ; Misiewicz, J. ; Lamas, T. E. ; Quivy, A. A.

Journal of Applied Physics, v. 101, p. 073518, 2007. DOI : 10.1063/1.2714686

Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells.

Cunha, J. F. R. ; da Silva, S. W. ; Morais, P. C. ; Lamas, T. E. ; Quivy, A. A.

Journal of Applied Physics, v. 102, p. 043704, 2007. DOI : 10.1063/1.2769963

Landau-level crossing in two-sub-band systems in a tilted magnetic field.

Duarte, C. A. ; Gusev, G. M. ; Quivy, A. A.; Lamas, T. E. ; Bakarov, A. K.

Physical Review B – Condensed Matter and Materials Physics, v. 76, p. 075346, 2007. DOI : 10.1103/PhysRevB.76.075346

Synchrotron x-ray renninger scanning for studying strin in InGaAs/GaAS quantum dot system.

Freitas, R. ; Lamas, T. E. ; Quivy, A. A. ; Morelhão, S. L.

Physica Status Solidi. A, Applied Research, v. 204, p. 2548-2554, 2007. DOI : 10.1002/pssa.200675673

Correlation between luminescence properties of AlGaAs/GaAs single quantum wells and barrier composition fluctuation.

Lourenço, S. A. ; Dias, I. F. L. ; Duarte, J. L. ; Lauretto, E. ; Quivy, A. A. ; Lamas, T. E.

Journal of Applied Physics, v. 101, p. 113536, 2007. DOI : 10.1063/1.2745843

Hall resistance and many-body effects in a parabolic well.

Zevellos, A. M. O. ; Mamani, N. C. ; Gusev, G. M. ; Quivy, A. A. ; Lamas, T. E. ; Portal, J.-C.

International Journal of Modern Physics B, v. 21, p. 1502-1506, 2007. DOI : 10.1142/S0217979207043099

Many-body effects in wide parabolic AlGaAs quantum wells.

Tabata, A. ; Martins, M. R. ; Oliveira, J. B. B. ; Lamas, T. E. ; Duarte, C. A. ; da Silva, E. C. F. ; Gusev, G. M.

Journal of Applied Physics, v. 102, p. 093715, 2007. DOI : 10.1063/1.2809418


2006

Quantum Hall ferromagnet in a two-dimensional electron gas coupled with quantum dots.

Gusev, G. M. ; Choque, N. M. S. ; Seabra, A. C. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Lamas, T. E. ; Portal, J.-C. .

Physica E. Low-Dimensional Systems and Nanostructures, v. 34, n.1-2, p. 504-507, 2006. DOI : 10.1016/j.physe.2006.03.097

Eletric Field Controlled g-factor in parabolic well determined by transport measurements.

Duarte, C. A. ; Gusev, G. M. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Lamas, T. E. ; Portal, J.-C. .

Physica E. Low-Dimensional Systems and Nanostructures, v. 34, n.1-2, p. 329-332, 2006. DOI : 10.1016/j.physe.2006.03.086

High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition.

Szafraniec, J. ; Tsao, S. ; Zhang, W. ; Lim, H. ; Taguchi, M. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Movaghar, B. ; Razeghi, M. .

Applied Physics Letters, v. 88, n.12, 2006. DOI : 10.1063/1.2188056

Spin Valve Effect and Hall Resistance in a wide Parabolic Well.

Duarte, C. A. ; Gusev, G. M. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Lamas, T. E. .

Brazilian Journal of Physics, v. 36, n.2A, p. 488-491, 2006. DOI : 10.1590/S0103-97332006000300068 

Magnetotransport in AlxGax-1As Quantum Wells with Different Potential Shapes.

Duarte, C. A. ; Gusev, G. M. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Lamas, T. E. .

Brazilian Journal of Physics, v. 36, n.2A, p. 336-339, 2006. DOI : 10.1590/S0103-97332006000300027 

InGaAs embedding of large InAs quantum dots obtained by pulsed In deposition for long-wavelength applications.

Quivy, A. A. (também Quivy, A. antes de 1996); Lamas, T. E. .

Brazilian Journal of Physics, Sao Paulo, v. 36, n.2A, p. 488-491, 2006. DOI : 10.1590/S0103-97332006000300046 

Gain and recombination dynamics of quantum-dot infrared photodetectors.

Lim, H. ; Movaghar, B. ; Tsao, S. ; Taguchi, M. ; Zhang, W. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Razeghi, M.

Physical Review B – Condensed Matter and Materials Physics, v. 74, p. 205321, 2006. DOI : 10.1103/PhysRevB.74.205321

Influence of residual impurity background on the nonradiative recombination processes in high purity InAs/GaSb superlattice photodiodes.

da Silva, E. C. F.; Hoffman, D. ; Hood, A. ; Nguyen, B. M. ; Delaunay, P. Y. ; Razeghi, M. .

Applied Physics Letters, v. 89, p. 243517, 2006. DOI : 10.1063/1.2405877


2005

Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3 micrometers.

Rudno-Rudzinski, W. ; Ryczko, K. ; Sek, G. ; Misiewicz, J. ; Silva, M. ; Quivy, A. A. (também Quivy, A. antes de 1996) .

Solid State Communications, v. 135, n.4, p. 232-236, 2005. DOI : [artigo]

The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots.

Pagnossin, I. R. ; da Silva, E. C. F. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Martini, S. ; Sérgio, C. S. .

Journal of Applied Physics, v. 97, n.11, 2005. DOI : [artigo]

Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3 micrometers.

Monte, A. F. G. ; Cunha, J. F. R. ; Soler, M. A. G. ; da Silva, S. W. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Morais, P. C. .

Microelectronics Journal, v. 36, n.3-6, p. 194-196, 2005. DOI : [artigo]

Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray Renninger scanning.

Morelhão, S. L. ; Avanci, L. H. ; Freitas, R. ; Quivy, A. A. (também Quivy, A. antes de 1996) .

Microelectronics Journal, v. 36, n.3-6, p. 219-222, 2005. DOI : [artigo]

Spin-dependent Hall effect in a parabolic well with a quasi-three-dimensional electron gas.

Gusev, G. M. ; Duarte, C. A. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Lamas, T. E. ; Leite, J. R. ; Bakarov, A. K. ; Toropov, A. I. .

Physical Review B – Condensed Matter and Materials Physics, v. 71, n.16, 2005. DOI : [artigo]

Large InAs/GaAs quantum dots with an optical response in the long-wavelength region.

da Silva, M. J. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Martini, S. ; Lamas, T. E. ; da Silva, E. C. F. ; Leite, J. R. .

Journal of Crystal Growth, v. 278, n.1-4, p. 103-107, 2005. DOI : [artigo]

High mobility of a three-dimensional hole gas in parabolic quantum wells grown on GaAs(311)A substrates.

Lamas, T. E. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Sergio, C. S. ; Gusev, G. M. ; Portal, J.-C. .

Journal of Applied Physics, v. 97, n.7, 2005. DOI : [artigo]

Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant.

Lamas, T. E. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Martini, S. ; da Silva, M. J. ; Leite, J. R. .

Thin Solid Films, v. 474, n.1-2, p. 25-30, 2005. DOI : [artigo]

Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs(001) substrates.

Martini, S. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Lamas, T. E. ; da Silva, E. C. F. .

Physical Review B – Solid State, American Physical Soc, v. 72, n.15, 2005. DOI : [artigo]


2004

Transport properties of a quantum Hall ferromagnet in parabolic wells.

Gusev, G. M. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Lamas, T. E. ; Leite, J. R. ; Estibals, O. ; Portal, J.-C. .

Physica E. Low-Dimensional Systems and Nanostructures, v. 22, n.1-3, p. 90-93, 2004. DOI : [artigo]

Transport of quasi-three dimensional hole gas in a magnetic field in the ultra-quantum limit.

Gusev, G. M. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Lamas, T. E. ; Leite, J. R. ; Estibals, O. ; Portal, J.-C. .

Physica E. Low-Dimensional Systems and Nanostructures, v. 22, n.1-3, p. 336-340, 2004. DOI : [artigo]

Charge-density wave instability in a parabolic well in a perpendicular magnetic field.

Gusev, G. M. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Lamas, T. E. ; Leite, J. R. ; Estibals, O. ; Portal, J.-C. .

Physica E. Low-Dimensional Systems and Nanostructures, v. 22, n.1-3, p. 115-118, 2004. DOI : [artigo]

Valence band anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain.

Gomes, P. F. ; Godoy, M. P. F. ; Nakaema, M. K. K. ; Iikawa, F. ; Lamas, T. E. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Brum, J. A. .

Physica Status Solidi. C, Conferences and Critical Reviews, Alemanha, v. 1, n.3, p. 547-550, 2004. DOI : [artigo]

Optical measurement of miniband dispersion and bandgap renormalization in modulation-doped AlGaAs/GaAs superlattices.

Oliveira, R. F. ; Henriques, A. B. ; Lamas, T. E. ; Quivy, A. A. (também Quivy, A. antes de 1996) .

International Journal of Modern Physics B, v. 18, n.27-29, p. 3817-3820, 2004. DOI : [artigo]

Indications of amplified spontaneous emission in the energy transfer between InAs self-assembled quantum dots.

de Sales, F. V. ; da Silva, S. W. ; Cruz, J. M. R. ; Monte, A. F. G. ; Soler, M. A. G. ; Morais, P. C. ; da Silva, M. J. ; Quivy, A. A. (também Quivy, A. antes de 1996) .

Physical Review B – Condensed Matter and Materials Physics, p. 235318, v. 70, n.23, 2004. DOI : [artigo]

Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields.

OLIVEIRA, R. F. ; HENRIQUES, A. B. ; LAMAS, T. E. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; ABRAMOF, E .

Journal of Physics. D, Applied Physics, v. 37, n.21, p. 2949-2953, 2004. DOI : [artigo]

Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal GaAs(001) substrates.

MONTE, A. F. G. ; SOLER, M. A. G. ; DA SILVA, S. W. ; RODRIGUES, B. B. D. ; MORAIS, P. C. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LEITE, J. R. .

Physica E. Low-Dimensional Systems and Nanostructures, v. 23, n.3-4, p. 466-470, 2004. DOI : [artigo]

Luminescence from miniband states in heavily doped superlattices.

OLIVEIRA, R. F. ; HENRIQUES, A. B. ; LAMAS, T. E. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; PIRES, M. P. ; SOUZA, P. L. ; YAVICH, B. ; ABRAMOF, E .

Brazilian Journal of Physics, v. 34, n.2B, p. 650-652, 2004. DOI : [artigo]


2003

Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si delta-doped GaAs/InGaAs quantum wells.

CAVALHEIRO, A. ; DA SILVA, E. C. F. ; QUIVY, A. A. (também QUIVY, A. anes de 1996) ; TAKAHASHI, E. K. ; MARTINI, S. ; DA SILVA, M. J. ; MENESES, E. A. ; LEITE, J. R. .

Journal of Physics. Condensed Matter, v. 15, p. 121, 2003. DOI : [artigo]

Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs (001) surface.

MARTINI, S. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LAMAS, T. E. ; DA SILVA, M. J. ; DA SILVA, E. C. F. ; LEITE, J. R. .

Journal of Crystal Growth, New York, v. 521, p. 101, 2003. DOI : [artigo]

Optical response at 1.3 and 1.5 microns with InAs quantum dots embedded in a pure GaAs matrix.

DA SILVA, M. J. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; MARTINI, S. ; LAMAS, T. E. ; DA SILVA, E. C. F. ; LEITE, J. R. .

Journal of Crystal Growth, New York, v. 251, p. 181, 2003. DOI : [artigo]

Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots.

DUARTE, C. A. ; DA SILVA, E. C. F. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; DA SILVA, M. J. ; MARTINI, S. ; LEITE, J. R. ; MENESES, E. A. ; LAURETTO, E. .

Journal of Applied Physics, v. 93, p. 6279, 2003. DOI : [artigo]

Observation of the spectral dependence of the spatial photocarrier redistribution in InAs/GaAs quantum dots.

DE SALES, F. V. ; DA SILVA, S. W. ; CRUZ, J. M. R. ; SOLER, M. A. G. ; MORAIS, P. C. ; DA SILVA, M. J. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LEITE, J. R. .

Physica E. Low-Dimensional Systems and Nanostructures, v. 17, p. 120, 2003. DOI : [artigo]

CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots.

CRUZ, J. M. R. ; DE SALES, F. V. ; DA SILVA, S. W. ; SOLER, M. A. G. ; MORAIS, P. C. ; DA SILVA, M. J. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LEITE, J. R. .

Physica E. Low-Dimensional Systems and Nanostructures, v. 17, p. 107, 2003. DOI : [artigo]

InAs/GaAs quantum dots optically active at 1.5 microns.

DA SILVA, M. J. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; MARTINI, S. ; LAMAS, T. E. ; DA SILVA, E. C. F. ; LEITE, J. R. .

Applied Physics Letters, v. 82, p. 2646, 2003. DOI : [artigo]

Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 microns.

DA SILVA, M. J. ; MARTINI, S. ; LAMAS, T. E. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; DA SILVA, E. C. F. ; LEITE, J. R. .

Microelectronics Journal, v. 34, n.5-8, p. 631, 2003.. DOI : [artigo]

Morphological and optical properties of p-type GaAs (001) layers doped with silicon.

LAMAS, T. E. ; MARTINI, S. ; DA SILVA, M. J. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LEITE, J. R. .

Microelectronics Journal, v. 34, n.5-8, p. 701, 2003. DOI : [artigo]

Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities.

MONTE, A. F. G. ; DE SALES, F. V. ; DA SILVA, S. W. ; SOLER, M. A. G. ; CRUZ, J. M. R. ; MORAIS, P. C. ; DA SILVA, M. J. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LEITE, J. R. .

Physica E. Low-Dimensional Systems and Nanostructures, v. 17, p. 122, 2003. DOI : [artigo]

Transport Properties of a Quantum Hall ferromagnet in a parabolic quantum well.

GUSEV, G. M. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LAMAS, T. E. ; LEITE, J. R. ; ESTIBALS, O. ; PORTAL, J.-C. .

Physical Review B – Condensed Matter and Materials Physics, v. 67, p. 15531, 2003. DOI : [artigo]

Optical properties of remotely doped parabolic quantum wells.

TABATA, A. ; OLIVEIRA, J. B. B. ; LAMAS, T. E. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; SÉRGIO, C. S. ; GUSEV, G. M. ; LEITE, J. R. .

Physica E. Low-Dimensional Systems and Nanostructures, v. 17, p. 262, 2003. DOI : [artigo]

Optical properties of H-band emission in single heterostructures.

QU, F. ; LINO, A .T. ; DANTAS, N. O. ; MORAIS, P. C. ; DA SILVA, E. C. F. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LEITE, J. R. .

Journal of Applied Physics, v. 94, p. 1686, 2003.DOI : [artigo]

Coupled rate equation modeling of self-assembled quantum-dot luminescence.

DE SALES, F. V. ; CRUZ, J. M. R. ; DA SILVA, S. W. ; SOLER, M. A. G. ; MORAIS, P. C. ; DA SILVA, M. J. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LEITE, J. R. .

Microelectronics Journal, v. 34, n.5-8, p. 705, 2003. DOI : [artigo]

Optical Properties of H-band emission in single heterojunctions.

QU, F. ; LINO, A .T. ; DANTAS, N. O. ; MORAIS, P. C. ; DA SILVA, E. C. F. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LEITE, J. R. .

Microelectronics Journal, v. 34, n.5-8, p. 755, 2003. DOI : [artigo]

Evolution of the two-dimensional towards three-dimensional Landau states in a wide parabolic quantum well.

SÉRGIO, C. S. ; GUSEV, G. M. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LAMAS, T. E. ; LEITE, J. R. .

Microelectronics Journal, v. 34, n.5-8, p. 763, 2003. DOI : [artigo]

Hybrid and effective satellites for studying superlattices.

MORELHÃO, S. L. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; HÄRTWIG, J.

Microelectronics Journal, v. 34, n.5-8, p. 695, 2003. DOI : [artigo]

Carrier kinetics in quantum dots through continuous wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient.

DE SALES, F. V. ; CRUZ, J. M. R. ; DA SILVA, S. W. ; SOLER, M. A. G. ; MORAIS, P. C. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; DA SILVA, M. J. ; LEITE, J. R. .

Journal of Applied Physics, v. 94, p. 1787, 2003. DOI : [artigo]

Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction.

MARTINI, S. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; DA SILVA, M. J. ; LAMAS, T. E. ; DA SILVA, E. C. F. ; LEITE, J. R. ; ABRAMOF, E .

Journal of Applied Physics, v. 94, p. 7050, 2003. DOI : [artigo]


2002

Study of the spontaneous step alignment of InAs quantum dots as a function of the film thickness.

DA SILVA, M. J. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; GONZALEZ-BORRERO, P. P. ; MAREGA JR, E. .

Thin Solid Films, USA, v. 410, p. 188, 2002. DOI : [artigo]

Maximization of the InAs quantum dot density through the growth of an intentionally non-homogeneous sample.

DA SILVA, M. J. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; GONZALEZ-BORRERO, P. P. ; MAREGA JR, E. .

Journal of Crystal Growth, New York, USA, v. 236, p. 41, 2002. DOI : [artigo]

In-situ determination of Indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy.

MARTINI, S. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) .

Brazilian Journal of Physics, São Paulo, Brasil, v. 32, p. 359, 2002. DOI : [artigo]

On the morphology of films grown by droplet-assisted molecular beam epitaxy.

LAMAS, T. E. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) .

Brazilian Journal of Physics, São Paulo, Brasil, v. 32, p. 299, 2002. DOI : [artigo]

Atomic-force-microscopy study of self-assembled InAs quantum dots along their complete evolution cycle.

DA SILVA, M. J. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; GONZALEZ-BORRERO, P. P. ; MAREGA JR, E. ; LEITE, J. R. .

Journal of Crystal Growth, New York, USA, v. 241, p. 19, 2002. DOI : [artigo]

Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using strain-reducing layers.

DA SILVA, M. J. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) .

Brazilian Journal of Physics, v. 32, p. 290, 2002. DOI : [artigo]

Investigation of optical and structural properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) substrates.

DE SALES, F. V. ; SOLER, M. A. G. ; UGARTE, D. ; ABRAMOF, E ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; DA SILVA, S. W. ; MARTINI, S. ; MORAIS, P. C. .

Physica. B, Condensed Matter, v. 311, p. 285, 2002. DOI : [artigo]

Illumination as a tool to investigate the quantum mobility of a two-dimensional electron gas in a Si-delta doped GaAs/InGaAs quantum well.

CAVALHEIRO, A. ; DA SILVA, E. C. F. ; TAKAHASHI, E. K. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LEITE, J. R. ; MENESES, E. A. .

Physical Review B – Condensed Matter and Materials Physics, v. 65, p. 75320, 2002. DOI : [artigo]

Interplay between direct gap renormalization and intervalley scattering in AlGaAs near the Gamma-X crossover.

ANDRADE, L. H. F. ; MAROTTI, R. E. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; CRUZ, C. H. B. .

Solid State Communications, v. 121, p. 181, 2002. DOI : [artigo]

Magnetotransport of a quasi-three-dimensional electron gas in the lowest Landau level.

GUSEV, G. M. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LAMAS, T. E. ; LEITE, J. R. ; BAKAROV, A. K. ; TOROPOV, A. I. ; ESTIBALS, O. ; PORTAL, J.-C. .

Physical Review B – Solid State, v. 65, p. 20531, 2002. DOI : [artigo]

Two-dimensional intensity profiles of effective satellites.

MORELHÃO, S. L. ; AVANCI, L. H. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; ABRAMOF, E .

Journal of Applied Crystallography, v. 35, p. 69, 2002. DOI : [artigo]

Real-time determination of the segregation strength of In atoms in InGaAs layers.

MARTINI, S. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; DA SILVA, E. C. F. ; LEITE, J. R. .

Applied Physics Letters, v. 81, p. 2863, 2002. DOI : [artigo]

Vibrational Properties of Cubic AlxGa1?xN and InxGa1?xN Ternary Alloys.

SANTOS, A. M. ; DA SILVA, Euzi Conceição Fernandes ; ALVES, H. W. L. ; LEITE, José Roberto ; NORIEGA, O. C. ; ALVES, J. L. A. .

Physica Status Solidi. B, Basic Research, WILEY-VCH Verlag Berlim, v. 232, n.1, p. 182-187, 2002. DOI : [artigo]

Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells.

LAURETTO, E. ; MENESES, Eliermes Arraes ; CARVALHO JR, W. ; BERNUSSI, A. A. ; RIBEIRO, E. ; DA SILVA, Euzi Conceição Fernandes ; OLIVEIRA, José Brás Barreto de

Brazilian Journal of Physics (Impresso), Brasil, v. 32, n.2A, p. 314-317, 2002. DOI : [artigo]

Vibrational Properties of Cubic InxGa1-xN Structures.

SILVEIRA, E. ; SANTOS, A. M. ; LEITE, J. R. ; DA SILVA, Euzi Conceição Fernandes ; NORIEGA, O. C. ; A. Khartechenko ; D. J. As ; E. A. Meneses ; E. Ribeiro ; ALVES, H. W. L.

Proceedings of the 26th ICPS, p. p38, 2002. DOI: [artigo]


2001

Correlation between structural and optical properties of InAs quantum dots along their evolution.

DA SILVA, M. J. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; GONZALEZ-BORRERO, P. P. ; MOSHEGOV, N. T. ; MAREGA JR, E. .

Journal of Crystal Growth, New York, v. 227, p. 1025, 2001. DOI : [artigo]

Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal substrates.

MARTINI, S. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; UGARTE, D. ; LANGE, C. ; RICHTER, W. ; TOKRANOV, V. E. .

Journal of Crystal Growth, New York, v. 227, p. 46, 2001. DOI : [artigo]

Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces.

MARTINI, S. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; TABATA, A. ; LEITE, J. R. .

Journal of Applied Physics, USA, v. 90, p. 2280, 2001. DOI : [artigo]

Step-bunching evidence in strained InGaAs/GaAs quantum wells grown on vicinal GaAs(001) substrates.

DE SALES, F. V. ; SOLER, M. A. G. ; UGARTE, D. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; DA SILVA, S. W. ; MARTINI, S. ; MORAIS, P. C. .

Physica Status Solidi. A, Applied Research, v. 187, p. 253, 2001. DOI : [artigo]

Excitation transfer through quantum dots measured by microluminescence: dependence on the quantum density.

DE SALES, F. V. ; DA SILVA, S. W. ; MONTE, A. F. G. ; SOLER, M. A. G. ; CRUZ, J. M. R. ; DA SILVA, M. J. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LEITE, J. R. ; MORAIS, P. C. .

Physica Status Solidi. A, Applied Research, Berlim, v. 187, p. 45, 2001. DOI : [artigo]


2000

Raman spectroscopy of vertical conductivity and localization effects in strongly-coupled semiconductor periodical structures.

PUSEP, Y. A ; SILVA, M. T. O. ; GALZERANI, J. C. ; RODRIGUES, S. C. P. ; SCOLFARO, L. M. R. ; LIMA, A. P. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LEITE, J. R. .

Journal of Applied Physics, Estados Unidos, v. 87, n.4, p. 1825, 2000. DOI : [artigo]

Temperature dependence of the Hall mobility in multiple p-type Si delta-doped GaAs layers grown on GaAs(311)A substrates.

FRIZZARINI, M. ; DA SILVA, E. C. F. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; CAVALHEIRO, A. ; LEITE, J. R. ; MENESES, E. A. .

Physical Review B – Solid State, Lancaster, v. 61, n.20, p. 13923, 2000. DOI : [artigo]

Reduction of Indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates.

MARTINI, S. ; TABATA, A. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LEITE, J. R. .

Journal of Vacuum Science & Technology B, Estados Unidos, v. 18, n.4, p. 1997, 2000. DOI : [artigo]


1999

Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells.

TABATA, A. ; MARTINI, S. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; CESCHIN, A. M. ; LEITE, J. R. .

Superlattices and Microstructures, Inglaterra, v. 25, n.1/2, p. 405, 1999. DOI : [artigo]

Band-edge modifications due to photo-generated carriers in single p-type delta-doped GaAs.

LEVINE, A. ; DA SILVA, E. C. F. ; ENDERLEIN, R. ; SIPAHI, G. M. ; SCOLFARO, L. M. R. ; LEITE, J. R. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; DIAS, I. F. L. ; LAURETTO, E. ; DUARTE, J. L. ; OLIVEIRA, J. B. B. ; MENESES, E. A. ; GONTIJO, A. G. .

Physical Review B – Solid State, Lancaster, v. 59, p. 4634, 1999. DOI : [artigo]

Lineshape analysis of photoreflectance spectra from InGaAs/GaAs quantum wells.

CHOQUE, N. M. S. ; SOARES, J. A. N. T. ; BELIAEV, D. ; SPERANDIO, A. L. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; SCOLFARO, L. M. R. ; LEITE, J. R. .

Superlattices and Microstructures, Inglaterra, v. 26, n.4, p. 243, 1999. DOI : [artigo]

Magnetotransport in a spatially modulated magnetic field.

GUSEV, G. M. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LEITE, J. R. ; BYKOV, A. A. ; MOSHEGOV, N. T. ; KUDRYASHEV, V. M. ; TOROPOV, A. I. ; NASTAUSHEV, Y. V. .

Brazilian Journal of Physics, Brasil, v. 29, n.4, p. 711, 1999. DOI : [artigo]

p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant.

QUIVY, A. A. (também QUIVY, A. antes de 1996); SPERANDIO, A. L. ; DA SILVA, E. C. F. ; LEITE, J. R. .

Journal of Crystal Growth, New York, v. 206, n.3, p. 171, 1999. DOI : [artigo]

Shubnikov-de Haas oscillations in a non planar two-dimensional electron gas.

GUSEV, G. M. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LEITE, J. R. ; BYKOV, A. A. ; MOSHEGOV, N. T. ; KUDRYASHEV, V. M. ; TOROPOV, A. I. ; NASTAUSHEV, Y. V. .

Semiconductor Science and Technology, Inglaterra, v. 14, p. 1114, 1999. DOI : [artigo]

Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/Ga0.7Al0.3As quantum wells.

OLIVEIRA, José Brás Barreto de ; MENESES, Eliermes Arraes ; da Silva, E C F .

Physical Review. B, Condensed Matter. (Cessou 1997. Cont. 1098-0121 Physical Review. B, Condensed Matter and Materials Physics), The American Physical Society, v. 60, n.3, p. 1519-1522, 1999. DOI : [artigo]


1998

Fano-like electron-phonon interference in delta-doped GaAs superlattices.

PUSEP, Y. A ; SILVA, M. T. O. ; GALZERANI, J. C. ; DA SILVA, S. W. ; SCOLFARO, L. M. R. ; ENDERLEIN, R. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LIMA, A. P. ; LEITE, J. R. .

Superlattices and Microstructures, Inglaterra, v. 23, n.5, p. 1033, 1998. DOI : [artigo]

Spatially direct recombinations observed in multiple delta-doped GaAs layers.

LEVINE, A. ; DA SILVA, E. C. F. ; SCOLFARO, L. M. R. ; BELIAEV, D. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; ENDERLEIN, R. ; LEITE, J. R. .

Superlattices and Microstructures, Inglaterra, v. 23, n.2, p. 301, 1998. DOI : [artigo]

Optical properties of GaAs/AlGaAs selectively doped quantum-well structures.

TABATA, A. ; LEVINE, A. ; CESCHIN, A. M. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; SCOLFARO, L. M. R. ; ENDERLEIN, R. ; LEITE, J. R. .

Radiation Effects and Defects in Solids, v. 146, p. 207, 1998. DOI : [artigo]

Preparation of InAs surfaces for scanning-tunneling-microscopy investigation in air.

LAMAS, T. E. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) .

Acta Microscopica, v. 7A, p. 181, 1998. DOI : [artigo]

Spatial confinement of self-organized MBE-grown InGaAs quantum dots.

QUIVY, A. A. (também QUIVY, A. antes de 1996); LEITE, J. R. .

Microelectronic Engineering, Holanda, v. 43-44, p. 19, 1998. DOI : [artigo]

Optical characterization of GaAs/AlAs multiple quantum well interfaces.

LEMOS, V. ; SÉRGIO, C. S. ; LIMA, A. P. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; ENDERLEIN, R. ; LEITE, J. R. ; CARVALHO JR, W. .

Radiation Effects and Defects in Solids, v. 146, p. 187, 1998. DOI : [artigo]

Theory of luminescence spectra from delta-doping structures: application to GaAs.

Sipahi GM ; Enderlein R ; Scolfaro LMR ; Leite JR ; da Silva, E C F ; Levine A .

Physical Review. B, Condensed Matter. (Cessou 1997. Cont. 1098-0121 Physical Review. B, Condensed Matter and Materials Physics), The american Physical Society, v. 57, n.15, p. 9168-9178, 1998. DOI : [artigo]


1997

p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates.

QUIVY, A. A. (também QUIVY, A. antes de 1996); FRIZZARINI, M. ; DA SILVA, E. C. F. ; SPERANDIO, A. L. ; LEITE, J. R. .

Brazilian Journal of Physics, Brasil, v. 27A, p. 125, 1997. DOI : [artigo]

STM measurements of InAs quantum dots using thin Au films for SEM investigation of insulating materials.

LAMAS, T. E. ; FERLAUTO, A. S. ; KIYOHARA, P. K. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) .

Acta Microscopica, v. 6A, p. 260, 1997. DOI : [artigo]

Growth of self-organized InGaAs islands by molecular beam epitaxy.

QUIVY, A. A. (também QUIVY, A. antes de 1996); COTTA, M. A. ; LEITE, J. R. .

Brazilian Journal of Physics, Brasil, v. 27A, p. 154, 1997. DOI : [artigo]

Photoreflectance measurements in GaAs/AlGaAs asymmetric quantum wells.

SOLER, M. A. G. ; DEPEYROT, J. ; MORAIS, P. C. ; SOARES, J. A. N. T. ; SCOLFARO, L. M. R. ; da Silva, E C F ; ENDERLEIN, R. ; WEIMANN, G. ; TRANKLE, G. .

Superlattices and Microstructures, Academic Press Limited, v. 21, n.4, p. 581-585, 1997. DOI : [artigo]

Optical studies of Be acceptors confined in flat islands at GaAs/GaAlAs quantum-well interfaces.

OLIVEIRA, José Brás Barreto de ; MENESES, Eliermes Arraes ; DA SILVA, Euzi Conceição Fernandes .

Proceedings Of The 7th International Conference On Shallow Level Centers In Semiconductors, World Scientific, v. 1, p. 465-470, 1997. DOI : [artigo]

New Results on Bound Excitons in GaAs/GaAlAs Quantum Wells.

DA SILVA, Euzi Conceição Fernandes; OLIVEIRA, José Brás Barreto de ; MENESES, Eliermes Arraes .

Brazilian Journal of Physics, v. 27/A, n.4, p. 194-197, 1997. DOI : [artigo]


1996

Optimization by STM measurements of sputtered Au thin films used in SEM investigation of insulating materials.

LAMAS, T. E. ; FERLAUTO, A. S. ; KIYOHARA, P. K. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) .

Acta Microscopica, v. 5B, p. 338, 1996. DOI : [artigo]

A new technique for studying semiconducting surfaces in air by scanning tunneling microscopy.

FERLAUTO, A. S. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) .

Modern Physics Letters B, Cingapura, v. 10, n.24, p. 1189, 1996. DOI : [artigo]

Raman study of Fano-like electron-phonon coupling in delta-doping GaAs superlattices.

PUSEP, Y. A ; SILVA, M. T. O. ; GALZERANI, J. C. ; DA SILVA, S. W. ; SCOLFARO, L. M. R. ; ENDERLEIN, R. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LIMA, A. P. ; LEITE, J. R. .

Physical Review B – Solid State, Lancaster, v. 54, n.19, p. 13927, 1996. DOI : [artigo]


1995

Electrical conductivity of doping superlattices parallel to the growth direction.

LEITE, J. R. ; RODRIGUES, S. C. P. ; SCOLFARO, L. M. R. ; ENDERLEIN, R. ; BELIAEV, D. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) .

Materials Science and Engineering. B, Solid State Materials for Advanced Technology, Inglaterra, v. 35, p. 250, 1995. DOI : [artigo]

STM study of the one-dimensional organic conductor TTF-TCNQ.

QUIVY, A. A. (também QUIVY, A. antes de 1996); JANSEN, A. G. M. ; WYDER, P. ; DELTOUR, R. ; VAN BENTUM, P. J. M. .

Surface Science, Holanda, v. 325, p. 185-192, 1995. DOI : [artigo]

Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric InGaAs/GaAs n-type delta-doped quantum wells.

TABATA, A. ; CESCHIN, A. M. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LEVINE, A. ; LEITE, J. R. ; ENDERLEIN, R. ; OLIVEIRA, J. B. B. ; LAURETTO, E. ; GONÇALVES, J. L. .

Materials Science and Engineering. B, Solid State Materials for Advanced Technology, Inglaterra, v. 35, p. 401, 1995. DOI : [artigo]


1994

STM Study of the one-dimensional inorganic conductor KCP(Br).

QUIVY, A. A. (também QUIVY, A. antes de 1996); JANSEN, A. G. M. ; WYDER, P. ; DELTOUR, R. ; VAN BENTUM, P. J. M. ; GERRITSEN, J. W. .

Surface Science, Holanda, v. 304, p. 360-364, 1994. DOI : [artigo]

Photoluminescence Studies on Delta-Doped InGaAs/GaAs Quantum Wells.

CESCHIN, A. M. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; DA SILVA, E. C. F. ; SOARES, J. A. N. T. ; ENDERLEIN, R. ; SCOLFARO, L. M. R. ; LEITE, J. R. ; MENESES, E. A. ; OLIVEIRA, J. B. B. .

Superlattices and Microstructures, United Kingdom, v. 11, p. 333, 1994. DOI : [artigo]

Photo- and electroreflectance spectra from spatially inhomogeneous heterostructures calculated by means of a new method.

BELIAEV, D. ; ENDERLEIN, R. ; SOARES, J. A. N. T. ; SCOLFARO, L. M. R. ; CESCHIN, A. M. ; QUIVY, A. A. (também QUIVY, A. antes de 1996) ; LEITE, J. R. .

Superlattices and Microstructures, United Kingdom, v. 11, p. 339, 1994. DOI : [artigo]

Electronic states of n-type delta-doping in GaAs heterostrucutres.

SCOLFARO, L. M. R. ; LEITE, José Roberto ; MENDONÇA, C. A. C. ; BELIAEV, D. ; SHIBLI, S. M. ; da Silva, E. C. F. ; Meneses, E. A. .

Materials Science Forum, v. 143, p. 669, 1994. DOI : [artigo]


1993

STM study of YBaCuO and BiSrCaCuO cleaved surfaces.

Davydov, D. ; Quivy, A. A. (também Quivy, A. antes de 1996) ; Diko, P. ; Mehbod, M. ; Ye, M. ; Deltour, R. .

Solid State Communications, Estados Unidos, v. 86, n.4, p. 267-271, 1993. DOI : [artigo]

Electronic properties of multiple Si Delta-doped GaAs layers grown by molecular beam epitaxy and migration-enhanced epitaxy.

Shibili, S. M. ; Henriques, A. B; Mendonca, C. A. C. ; da Silva, E C F ; Meneses, E. A. ; Scolfaro, L. M. R. ; Leite, J. R. .

Journal of Crystal Growth, Zurique, v. 127, p. 700-702, 1993. DOI : [artigo]


1992

Relaxation of magnetic moments in GaAs/GaAlAs quantum wells.

da Silva, E C F; Chitta, V. A. ; Toet, D. ; Potemski, M. ; Maan, J. C. ; Ploog, K. .

Semiconductor Science and Technology (Print), United Kingdom, v. 7, p. 1369-1376, 1992. DOI : [artigo]


1991

Experimental studies of the relaxation of magnetic moment in GaAs/GaAlAs quantum wells.

Chitta, V. A. ; da Silva, E C F; Toet, D. ; Potemski, M. ; Maan, J. C. ; Ploog, K. .

Optics of Excitons in Confined Systems, Proceedings of the INT Meeting, Italy, v. 123, p. 305-312, 1991, ISBN 9780854984138. DOI : [artigo]


1989

Transport phenomena in polymer/graphite composite materials.

Quivy, A. A. (também Quivy, A. antes de 1996); Deltour, R. ; Jansen, A. G. M. ; Wyder, P. .

Physical Review B – Solid State, Estados Unidos, v. 39, p. 1026-1030, 1989. DOI : [artigo]

Electrical Transport mechanisms in conducting particles-polymer composites.

Deltour, R. ; Mehbod, M. ; Pierre, C. ; Quivy, A. A. (também Quivy, A. antes de 1996) .

Bull Soc Chim Belg, Bélgica, v. 98, p. 741-746, 1989. DOI : [artigo]

Green’s-Function Calculation of the Formation Entropy of a Vacancy in Silicon.

Leite, J R; da Silva, E C F; Dal Pino JR, Arnaldo .

Materials Science Forum (Online), Zurique, v. 38-41, p. 263-268, 1989. DOI : [artigo]

Hydrogen passivation of shallow donors in silicon.

da Silva, E. C. F.; Assali, L. V. C. ; Leite, J. R. .

International Journal of Quantum Chemistry, v. 36, p. 693-699, 1989. DOI : [artigo]

Lattice response around a silicon vacancy.

Dal Pino JR, A ; da Silva, E C F ; Leite, J R.

Proceedings Of The 4th Brazilian School Of Semiconductor Physics, Brasil, v. 01, p. 363-366, 1989. DOI : [artigo]


1988

The dangling bonds reconstruction effects on the formation entropy of a silicon vacancy.

Dal Pino JR, A ; da Silva, E C F; Leite, J R .

Current Topics On Semiconductor Physics, Brasil, p. 109-201, 1988, ISBN : 9971505819. DOI : [artigo]

Microscopic model for the vibrational modes associated to the BH complex in Si.

da Silva, E C F; Assali, L. V. C. ; Dal Pino JR, A ; Leite, J R.

Current Topics on Semiconductor Physics, Brasil, p. 97-100, 1988, ISBN : 9971505819. DOI : [artigo]

Vibrational-mode theory of acceptor-hydrogen complexes in silicon.

Assali LVC ; da Silva, E C F ; Leite JR ; Dalpino A .

Physical Review. B, Condensed Matter. (Cessou 1997. Cont. 1098-0121 Physical Review. B, Condensed Matter and Materials Physics), Lancaster, v. 37, n.6, p. 3113-3116, 1988. DOI : [artigo]

Microscopic structure of group III acceptor-hydrogen complexes in crystalline silicon.

Leite, J R ; Assali, L. V. C. ; da Silva, E C F; Baumvol, I. J. R. .

Proceedings Of The 19th International Conference On The Physics Of Semiconductors, Warsaw, v. 2, p. 1167-1170, 1988. DOI : [artigo]

2024

High-performance infrared photodetector based on InAs/GaAs submonolayer quantum dots grown at high temperature with a (2×4) surface reconstruction

Alzeidan, A. Cantalice, T.F., Sautter, K.E., Vallejo, K.D., Simmonds, P.J. and Quivy, A.A.

Sens. Actuators A Phys., 374, 115464 (2024). DOI : 10.1016/j.sna.2024.115464