Resumo : This study explores the growth quality of a far-infrared asymmetric GaAs/Al0.15Ga0.85As quantum Bragg mirror detector (QBMD) targeting an optical absorption of 111 meV. The sample was grown by molecular beam epitaxy (MBE) and characterized through high-resolution x-ray diffraction (HRXRD) to evaluate the influence of structural disorder on the HRXRD spectrum. Experimental HRXRD results were compared with simulated diffraction spectra, revealing that, despite thickness fluctuations of up to two monolayers in the quantum wells and barriers of the active region, the growth quality of the QBMD was excellent. By considering the “worst-case scenario”—in which all the layers are increased or decreased by exactly two monolayers—the impact on the optical transition is less than 5%.