Inside Semiconductor Design: The Power of Modeling and Simulation | Colóquio IFUSP
Data de Início:
quinta-feira, 12 Fevereiro, 2026 - 16:00
Palestrante:
Prof. Alain Michez - Universidade de Montpellier - França
Local:
Auditório Abrahão de Moraes
Sobre o evento:
This presentation provides an overview of TCAD modeling of semiconductor devices together with a demonstration of the capabilities of the ECORCE TCAD software. The critical role of mesh quality in achieving accurate and reliable simulation results is first emphasized, highlighting its impact on resolving key physical phenomena in active device regions.
Live demonstrations illustrate the complete TCAD workflow, from geometry and meshing to physics setup and result analysis. The presentation then addresses total ionizing dose (TID) effects, including charge generation and trapping mechanisms in insulating layers and their impact on device electrical characteristics. Single Event Effects (SEE) induced by energetic particles are also discussed, focusing on localized charge deposition and transient or destructive events.
Finally, the presentation discusses the TCAD modeling of wide band-gap semiconductors, addressing the specific physical mechanisms and numerical challenges associated with these materials, as well as their relevance for high-power, high-voltage, and radiation-tolerant applications.
This presentation provides an overview of TCAD modeling of semiconductor devices together with a demonstration of the capabilities of the ECORCE TCAD software. The critical role of mesh quality in achieving accurate and reliable simulation results is first emphasized, highlighting its impact on resolving key physical phenomena in active device regions.
Live demonstrations illustrate the complete TCAD workflow, from geometry and meshing to physics setup and result analysis. The presentation then addresses total ionizing dose (TID) effects, including charge generation and trapping mechanisms in insulating layers and their impact on device electrical characteristics. Single Event Effects (SEE) induced by energetic particles are also discussed, focusing on localized charge deposition and transient or destructive events.
Finally, the presentation discusses the TCAD modeling of wide band-gap semiconductors, addressing the specific physical mechanisms and numerical challenges associated with these materials, as well as their relevance for high-power, high-voltage, and radiation-tolerant applications.
Mini autobiografia do palestrante:
Alain Michez is a physicist and software architect specializing in semiconductor device modeling and numerical simulation. He is the Chief Technology Officer (CTO) and co-founder of Delphea, a spin-off from the Institute of Electronics and Systems (IES) at the University of Montpellier.
With over 30 years of experience in TCAD development, he has been deeply involved in the design of advanced simulation tools for semiconductor devices, with a strong focus on radiation effects, advanced meshing strategies, and the simulation of complex physical phenomena in semiconductor materials. His work supports both academic research and industrial applications, especially in environments subject to ionizing radiation.
With over 30 years of experience in TCAD development, he has been deeply involved in the design of advanced simulation tools for semiconductor devices, with a strong focus on radiation effects, advanced meshing strategies, and the simulation of complex physical phenomena in semiconductor materials. His work supports both academic research and industrial applications, especially in environments subject to ionizing radiation.
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