Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well

The thermoelectric response of HgTe quantum wells in the state of two-dimensional topological insulator  has been studied experimentally. Ambipolar thermopower, typical for an electron– hole system, has been observed across the charge neutrality point, where the carrier type changes from electrons to holes according to the resistance measurements. Authors present a theoretical model which takes into account both the edge and bulk contributions to the electrical conductivity and thermoelectric effect in a 2D topological insulator, including the effects of edge to bulk leakage.

 

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Desenvolvido por IFUSP