Journal Articles 1989

1.   ASSALI, L. V. C. ; GOMES, V. M. S. ; LEITE, J. R. ; CHACHAM, H. ; ALVES, J. L. A. . Shallow Acceptor Action of C-H Pair in Silicon and Germanium. Int Phys Conf Ser, v. 95, p. 453, 1989.
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2.   ASSALI, L. V. C. ; LEITE, J. R. . Bistability of Iron-Group III Acceptor Pairs in Silicon. Materials Science Forum, v. 38-41, p. 409, 1989.
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3.   BINDILATTI, V. ; BECERRA, C. c. ; OLIVEIRA Jr. , N. F. . Specific Heat Exponent and Critical Amplitude Ratio at the Lifshitz Multicritical Point in MnP. Physical Review B - Condensed Matter and Materials Physics, v. 40, p. 9412-9415, 1989.
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4.   BINDILATTI, V. ; BECERRA, C. C. ; OLIVEIRA JR, N. F. . Specific-Heat Exponent and Critical-Amplitude Ratio at the Lifshitz Multicritical Point. Physical Review. B, Condensed Matter and Materials Physics, Estados Unidos, v. 40, p. 9412-9415, 1989.
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5.   CALDAS, M. J. ; FAZZIO, A. . Correlation Effects in Native Defects in GaAs. Materials Science Forum, v. 38-41, p. 119, 1989.
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6.   Dal Pino JR, Arnaldo ; DA SILVA, Euzi Conceição Fernandes ; LEITE, José Roberto . Lattice response around a silicon vacancy. Proceedings Of The 4th Brazilian School Of Semiconductor Physics, Brasil, v. 01, p. 363-366, 1989.
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7.   FIGUEIREDO, S. K. ; FERRAZ, A. C. . Interface Geometry of (GaAs)n(InAs)n and (GaP)n(InP)n Ultra-Thin Superlattices. Applied Surface Science, v. 41/42, p. 509-511, 1989.
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8.   FIGUEIREDO, S. K. ; FERRAZ, A. C. . Geometry and Stability of (GaAs)n(InAs)n and (GaP)n(InP)n Ultra-Thin Superlattices. Current Topics On Semiconductor Physics, p. 312-314, 1989.
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9.   GALVãO, D. S. ; SANTOS, D. A. ; LAKS, B. ; MELO, C. P. ; CALDAS, M. J. . Role of Disorder in the Conduction Mechanism of Polyanilines. Physical Review Letters, v. 63, p. 786-789, 1989.
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10.   GOMES, V M S ; OLIVEIRA, G M G ; LEITE, J. R. ; CHAVES, A S . Electronic Subbands at GaAs-AlGaAs Heterojunctions in Parallel Magnetic Fields. Superlattices and Microstructures, v. 6, p. 47, 1989.
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11.   GOMES, V M S ; PINTANEL, R ; SCOLFARO, L M R ; LEITE, J. R. . Group-IV Impurity-Related Centers in GaAs. Materials Science Forum, v. 38-41, p. 833, 1989.
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12.   LEITE, J. R. ; SILVA, e C F da ; PINO JR, A Dal . Green's-Function Calculation of the Formation Entropy of a Vacancy in Silicon. Materials Science Forum, v. 38-41, p. 263, 1989.
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13.   LEITE, José Roberto ; DA SILVA, Euzi Conceição Fernandes ; Dal Pino JR, Arnaldo . Green's-Function Calculation of the Formation Entropy of a Vacancy in Silicon. Materials Science Forum, Zurique, v. 38-41, p. 263-268, 1989.
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14.   LIMA, G. A. R. ; FAZZIO, A. ; MOTA, R. . Metal-Semiconductor Transition in Cerium Hydrides. International Journal of Quantum Chemistry, v. S23, p. 709, 1989.
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15.   LIMA, G. A. R. ; MOTA, R. ; SARDELA, M. ; FAZZIO, A. . The Cr2+ Luminescence in GaAs as a Function of Hydrostatic Pressure. Solid State Communications, v. 69, p. 461, 1989.
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16.   LIMA, M. A. P. ; WATARI, K. ; MCKOY, V. . Polarization Effects in Low-Energy e-CH(4) Collisions. Physical Review. A, v. 39, p. 4312, 1989.
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17.   LINO, A. T. ; LEITE, J. R. ; ASSALI, L. V. C. ; GOMES, V. M. S. . Electronic Structure of the Mn4 Complex in Silicon. International Journal of Quantum Chemistry, v. S23, p. 701, 1989.
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18.   MAKIUCHI, N. ; MACEDO, T. C. ; CALDAS, M. J. ; FAZZIO, A. . Impurities in Gallium Arsenide and Phosphide: the 4d and 5d Series. Diffusion and Defect Data, Solid State Data. Part A, Defect and Diffusion Forum, v. 62-63, p. 145, 1989.
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19.   OLIVEIRA Jr. , N. F. ; NICHOLLS, J. T. ; SHAPIRA, Y. ; DRESSELHAUS, G. ; PICONE, P. J. ; GABBE, D. R. ; JENSSEN, H. P. . Magnetostriction of Single-Crystal La Indice 2 CuO Indice 4. PHYS. REV. B. , v. 39, p. 2898-99999, 1989.
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20.   PARTITI, C. S. M. ; RECHENBERG, H. R. . Temperature dependence of EPR spectra of Fe3+ in (NH4)2InCl5. H2O. Journal of Physics and Chemistry of Solids, v. 50, p. 1023-1026, 1989.
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21.   PARTITI, C. S. M. ; RECHEMBERG, H. R. . Temperature Dependence Of Epr Spectra Of 'Fe' Pot. 5+' In (Nh Ind. 4) Ind. 2 'In 'Cl' Ind. 5 H. Ind. 2 O'. J. PHYS. CHEM. SOLIDS, v. 50, p. 1023-1026, 1989.
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22.   SANTOS, Antonio Domingues dos ; MISSELL, F. P. . Activation Energy Spectrum Of Induced Anisotropy In 'Co Ind. 70,4 Fe Ind. 4,6 Si Ind. 15 B Ind. 10'. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v. 79, p. 349-354, 1989.
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23.   SCOLFARO, L. M. R. ; FAZZIO, A. . Native Defects and Transition Metal Impurities at Interstitial Sites in GaAs. International Journal of Quantum Chemistry, v. S23, p. 677, 1989.
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24.   SILVA, E. C. F. ; ASSALI, L. V. C. ; LEITE, J. R. . Hydrogen Passivation of Shallow Donors in Silicon. International Journal of Quantum Chemistry, v. S23, p. 693, 1989.
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25.   TAKAHASHI, E. K. ; LINO, A. T. ; FERRAZ, A. C. ; LEITE, J. R. . Electronic Structure of Semiconductors of Group IV and III-V Compounds by Self-Consistent Variational Cellular Method. Current Topics On Semiconductor Physics, p. 359-362, 1989.
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26.   TOMA, H. E. ; MORINO, L. A. ; RECHENBERG, H. R. . Correlation of Mössbauer and charge-transfer spectra of bis (dimethylglioximato) iron (II) complexes containing axial N-heterocyclic ligands. Spectroscopy Letters, v. 22, p. 795-807, 1989.
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27.   VELLEGO, G. ; BINDILATTI, V. ; OLIVEIRA JR, N. F. . System for Critical Current Measurements on NbTi Superconducting Wires. Revista Brasileira de Física Aplicada e Instrumentação, Brasil, v. 4, p. 172-187, 1989.
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