Caros Colegas:

Fomos informados, ontem, que a Procuradoria Geral acatou o parecer do DRH contrário à homologação do resultado da 2a. Movimentação na Carreira dos servidores técnicos e administrativos. Teremos que reiniciar o processo, a partir do final da avaliação. 

Procuraremos definir junto com o DRH, como isso será feito e a partir de quando, mas só depois que recebermos oficialmente o processo e pudermos discutir os detalhes com o DRH.

Divulgaremos notícias sempre que houver novidades a respeito do andamento do processo.


Atenciosamente,
Prof. Dr. Adalberto Fazzio
Diretor 
e
Prof. Dr. Marcos Nogueira Martins
Vice-Diretor

Seminário do Departamento de Física Nuclear.

Terrestrial and space radiation effects on CMOS electronics: the case of non-volatile memories.

Palestrante: Alessandro Paccagnella, Department of Information Engineering, University of Padova / Italy.

Data e horário: 17/12/2014, às 16h
Local: Sala de Seminários do DFN

Terrestrial and space radiation effects on CMOS electronics: the case of non-volatile memories

Alessandro Paccagnella

Department of Information Engineering, University of Padova, Italy

 

 

USP, 17 December 2014

 

The main degradation phenomena affecting CMOS devices exposed to ionizing radiation are the total ionizing dose (TID) effects and the single event effects (SEE). TID derives from the accumulation of dielectric trapped charge and Si/oxide interface states, as a consequence of irradiation with many particles with low ionization power, i.e, low linear energy transfer (LET) coefficient. In general TID produces parametric shifts of electrical characteristics (e.g., Vt, gm) of the irradiated devices. SEEs derive from the charge released by a single high-LET ionizing particle, crossing the IC close to a sensitive node. SEEs may give rise to both recoverable soft errors (i.e., bit flip of one or more logic nodes or memory cells) and irreversible hard failures, such as gate oxide breakdown or device burn-out. While TID effects are deterministic, SEEs are stochastic in nature. In this seminar, we’ll present the variety of TID and SEE phenomena occurring in CMOS components exposed to i!
onizing radiation, and their evolution with Moore’s law. In the last part of the seminar, we’ll focus on the effects affecting non-volatile memories (NVM), which feature the most advanced scaled technologies and even true 3-D integration, leveraging the results obtained during more than 10 years of work in the field by our group. This part will be mainly focused on floating gate NVMs featuring NOR or NAND architectures, including also results for novel memories, such as the phase change ones. Finally, we’ll examine reliability implications, significant for both the terrestrial and the space radiation environments.

Prezados Senhores,

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de 01/12/2014 à 31/01/2015 a todo o Instituto. 
O acesso ao SpringerMaterials permite que os estudantes, docentes e pesquisadores conheçam a base que é composta por;

•400 volumes da coleção Landolt-Börnstein, 250.000 substâncias e 1.200.000 citações
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Base de dados Linus Pauling Files, a maior sobre sólidos inorgânicos que compreende 255.000 documentos.

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Atenciosamente,
VIRGINIA DE PAIVA
3091-6923 / SBI - IFUSP