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ISOLATED ELECTRON SPINS IN SILICON CARBIDE WITH MILLISECOND COHERENCE TIMES

ALYSON FERREIRA MORAIS

Tuesday, September 15, 2015

The elimination of defects from ​SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because certain ​SiC defects have electronic states with sharp optical and spin transitions, they are increasingly recognized as a platform for quantum information and nanoscale sensing. Here, we show that individual electron spins in high-purity monocrystalline 4H–SiC can be isolated and coherently controlled. Bound to neutral divacancy defects, these states exhibit exceptionally long ensemble Hahn-echo spin coherence times, exceeding 1 ms. Coherent control of single spins in a material amenable to advanced growth and microfabrication techniques is an exciting route towards wafer-scale quantum technologies.

LaMn3Cr4Owith cubic symmetry is a novel spin-driven multiferroic system with strong magnetoelectric coupling effects. When a magnetic field is applied in parallel (perpendicular) to an electric field, the ferroelectric polarization can be enhanced (suppressed) significantly. The unique multiferroic phenomenon observed in this cubic perovskite cannot be understood by conventional spin-driven microscopic mechanisms. Instead, a nontrivial effect involving the interactions between two magnetic sublattices is likely to play a crucial role.

 

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