WORKSHOP SOBRE O MÉDOTO SCALE-UP 

Nos dias 3 e 4 de fevereiro de 2015, das 8h30 às 11h00 e das 13h30 às 16h00, ocorrerá no IFUSP um workshop sobre o método SCALE-UP. O workshop, conduzido pela dra. Kathleen Foote, da Universidade Estadual da Carolina do Norte, consistirá de sessões de discussão e de atividades, fornecendo uma experiência de sala de aula no método. 

Embora o público-alvo primordial seja a equipe de docentes e estagiários PAE da disciplina de Física I para o IF e o IAG, há alguma disponibilidade de vagas para outros interessados, que podem manifestar seu interesse enviando mensagem para o e-mail apvieira@if.usp.br.

Comunicamos aos funcionários do Instituto de Física da USP não Docentes, que as inscrições para eleições dos representantes dos funcionários Gestão 2015/2016, 
foram prorrogadas até dia 30/01/15. Os candidatos interessados deverão se inscrever até dia 30 de janeiro de 2015, na Seção de Pessoal.
Venha participar, sua colaboração junto a esta nova Gestão será muito bem vinda, partiCIPA.

Seminário do Departamento de Física Nuclear

Palestrante: Alessandro Paccagnella, Department of Information Engineering, University of Padova / Italy.

"Terrestrial and space radiation effects on CMOS electronics: the case of non-volatile memories".

Data e horário: 17/12/2014, às 16h
Local: Sala de Seminários do DFN



USP, 17 December 2014
 

The main degradation phenomena affecting CMOS devices exposed to ionizing radiation are the total ionizing dose (TID) effects and the single event effects (SEE). TID derives from the accumulation of dielectric trapped charge and Si/oxide interface states, as a consequence of irradiation with many particles with low ionization power, i.e, low linear energy transfer (LET) coefficient. In general TID produces parametric shifts of electrical characteristics (e.g., Vt, gm) of the irradiated devices. SEEs derive from the charge released by a single high-LET ionizing particle, crossing the IC close to a sensitive node. SEEs may give rise to both recoverable soft errors (i.e., bit flip of one or more logic nodes or memory cells) and irreversible hard failures, such as gate oxide breakdown or device burn-out. While TID effects are deterministic, SEEs are stochastic in nature. In this seminar, we’ll present the variety of TID and SEE phenomena occurring in CMOS components exposed to i!
 onizing radiation, and their evolution with Moore’s law. In the last part of the seminar, we’ll focus on the effects affecting non-volatile memories (NVM), which feature the most advanced scaled technologies and even true 3-D integration, leveraging the results obtained during more than 10 years of work in the field by our group. This part will be mainly focused on floating gate NVMs featuring NOR or NAND architectures, including also results for novel memories, such as the phase change ones. Finally, we’ll examine reliability implications, significant for both the terrestrial and the space radiation environments.