Dos autores Saulo G. Alberton, Vitor A. P. Aguiar, Nemitala Added, Alexis C. Vilas-Bôas, Marcilei A. Guazzelli, Jeffery Wyss, Luca Silvestrin, Serena Mattiazzo, Matheus S. Pereira, Saulo Finco, Alessandro Paccagnella e Nilberto H. Medina.
Publicado em Electronics.
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Abstract:
The U-shaped Metal-Oxide-Semiconductor Field-Effect Transistor (UMOS or trench FET) is one of the most widely used semiconductor power devices worldwide, increasingly replacing the traditional vertical double-diffused MOSFET (DMOSFET) in various applications due to its superior electrical performance. However, a detailed experimental comparison of ion-induced Single-Event Burnout (SEB) in similarly rated silicon (Si) UMOS and DMOS devices remains lacking. This study presents a comprehensive experimental comparison of ion-induced charge collection mechanisms and SEB susceptibility in similarly rated Si UMOS and DMOS devices. Charge collection mechanisms due to alpha particles from 241Am radiation source are analyzed, and SEB cross sections induced by heavy ions from particle accelerators are directly compared. The implications of the unique gate structure of Si UMOSFETs on their reliability in harsh radiation environments are discussed based on technology computer-aided design (TCAD) simulations.
