Dos autores Saulo G. Alberton, Alexis C. Vilas-Boas, Marcilei A. Guazzelli, Vitor A. P. Aguiar, Matheus S. Pereira, Nemitala Added, Claudio A. Federico, Tassio C. Cavalcante, Evaldo C. F. Pereira Junior, Rafael G. Vaz, Odair L. Gonçalez, Jeffery Wyss, Alessandro Paccagnella, Nilberto H. Medina. Publicado em IEEE Transactions on Device and Materials Reliability.
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Abstract:
The trench gate or U-groove MOSFET (UMOSFET) has become widely adopted as a semiconductor device globally, gradually replacing the traditional vertical double-diffused MOSFET (DMOSFET) in many applications. Evaluating the reliability of UMOSFETs regarding neutron-induced radiation effects is crucial for understanding their response to ubiquitous atmospheric neutrons. This study presents comparative experimental and computational results of Single-Event Effects induced by monoenergetic fast neutrons in UMOS and DMOS power transistors. Experiments demonstrate that UMOSFETs exhibit premature particle-induced avalanche multiplication effects compared to similarly rated DMOSFETs, which may favor destructive radiation effects, such as Single-Event Burnout, when operating in the terrestrial radiation environment.
