mai
08
2014
By intranet
In collaboration with the Institute of Semiconductor Physics from Russia, Prof. Gennady Gusev studied the quantized transport in HgTe wells with inverted band structure corresponding to the two-dimensional topological insulator phase (2D TI) with locally controlled density allowing n-p-n and n-2D TI-n junctions. The resistance reveals the fractional plateau 2h/e2 in the n-p-n regime in the presence of the strong perpendicular magnetic field.
“Quantum Hall Effect in n-p-n and n-2D Topological Insulator-n Junctions”
Phys. Rev. Lett. 110, 076805 (2013).
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