nov
08
2014
A possible roadmap for spintronic devices in wide bandgap semiconductors
By luiz
Prof. Lucy Assali investigate the eletronic properties of lanthanide impurities (from Eu to Tm) in wurtzite gallium nitride and zinc oxide in a collaboration paper between the Institute of Physics and the Polytechnic School of the University of São Paulo. The first principles calculations results indicated that the 4f-related energy levels remain outside the bandgap in both materials.
Português, Brasil
A neutron diffraction study by Prof. Renato F. Jardim in collaboration with UNICAMP, NIST and the San Diego State University determined the magnetic properties of the Sr2YRuO6 system. The data revealed planar magnetic correlations that condense into a partial long-range ordered state with coupled alternate antiferromagnetic YRuO4 square layers coexisting with the short-range correlations.
In collaboration with the Institute of Semiconductor Physics from Russia, Prof. Gennady Gusev studied the quantized transport in HgTe wells with inverted band structure corresponding to the two-dimensional topological insulator phase (2D TI) with locally controlled density allowing n-p-n and n-2D TI-n junctions.
In a recent publication in Physical Review B Rapid Communications, the first experimental observation of the spin Hall effect in a high-mobility two-dimensional electron gas was reported. The study was completely developed in the LNMS at DFMT-IFUSP by Prof. Felix Hernandez, Prof. Gennady Gusev and Leonardo Nunes (M.Sc. student).
A new mask aligner, model 206IR from OAI, was recently installed (June 10, 2013) at the New Semiconductor Materials Laboratory (LNMS) of the DFMT. The system is able to handle 6" wafers and can operate in soft, hard or vacuum mode, using front or backside illumination (with infrared radiation). It was installed in a clean and yellow room, and will be used for optical lithography with a resolution down to 1 um, in order to p
A new electron-beam deposition system, model NEXDEP from Angstrom Engineering, fully automated (vacuum and deposition functions), having six 7cc pockets and a 6 kW power supply, was recently installed (May 15, 2013) in the New Semiconductor Materials Laboratory (LNMS) of the DFMT.