Dos autores Mateus Dutra, Esteban Marulanda, Gustavo G. Vasques, Jaime Ferreira Oliveira, Pedro C. Sabino, Rebeca Brigato Delgado, Leticie Mendonça-Fereira, Adriano R. V. Benvenho, Elisa Baggio-Saitovitch, Ricardo K. Machado, Nicolas M. Kawahala, Julian Munevar, Marcos A. Avila e Felix G. G. Hernandez.
Publicado em Advanced Electronic Materials (2026), e70474.
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Abstract
The effect of Ga substitution on the electronic, magnetic, and low-energy responses of the Zintl phase EuZn2P2
is investigated by electrical transport, electron spin resonance (ESR), and terahertz time-domain spectroscopy (THz-TDS). Incorporating Ga into EuZn2P2 (EuZn1.8Ga0.2P2) reduces the electrical resistivity, indicating enhanced free-carrier density and a narrowed semiconducting gap. ESR confirms the persistence of Eu2+ moments while showing a crossover from a Lorentzian to a Dysonian lineshape, consistent with reduced skin depth, increased carrier density, and the emergence of diffusive contributions. The Ga-substituted compound displays pronounced negative magnetoresistance linked to magnetic-polaron formation. THz-TDS reveals strong low-frequency absorption and a notable enhancement of the Drude conductivity in the substituted material, together with an increased carrier scattering time and enhanced carrier-density–to–effective-mass ratio. These results demonstrate that Ga substitution tunes charge transport, carrier dynamics, and short-range magnetic correlations in EuZn2P2, establishing EuZn1.8Ga0.2P2
as a promising platform for engineering correlated narrow-gap magnetic semiconductors with enhanced electronic and spin-dependent functionalities.
