Impact of grain boundaries on the performance of semiconductor devices | Colóquio IFUSP

Resumo:  In many semiconductor devices such as solar cells, the functional layers are polycrystalline and thus, contain grain boundaries in addition to other line and planar defects. The correct assessment of the recombination of charge carriers at grain boundaries is essential for the quantification of loss mechanisms in semiconductor devices. The present seminar talk will show how correlative electron microscopy can be applied to characterize the grain boundaries in a polycrystalline, semiconductor materials and to determine the corresponding recombination velocities. These quantities can be simulated by an approach which has been developed just recently. The gathered grain-boundary properties are important input parameters for two- and three-dimensional device simulations. Indeed, the presented model has been verified for various materials used as absorber layers in solar cells, including silicon, halide perovskites, Cu(In,Ga)Se2, CdTe, and Cu2ZnSn(S,Se)4.

 

Sobre o palestrante: Daniel Abou-Ras studied physics in Freiburg, Germany, and in Paris, France. He received his doctoral degree by the ETH Zurich, Switzerland in 2005, before joining the Hahn-Meitner-Institute (today, the Helmholtz-Zentrum Berlin for Materials and Energy) in 2006. Daniel Abou-Ras heads a group for electron microscopy of various energy materials, with a focus on photovoltaic cells. He is author or coauthor of about 170 publications in peer-reviewed journals. Currently, he is staying as a guest researcher and lecturer at the Escola de Engenharia de Lorena (EEL-USP).

 

• Auditório Abrahão de Moraes no IFUSP;
• Transmissão pública: acompanhe pelo YouTube do IFUSP.