A possible roadmap for spintronic devices in wide bandgap semiconductors
Prof. Lucy Assali investigate the eletronic properties of lanthanide impurities (from Eu to Tm) in wurtzite gallium nitride and zinc oxide in a collaboration paper between the Institute of Physics and the Polytechnic School of the University of São Paulo. The first principles calculations results indicated that the 4f-related energy levels remain outside the bandgap in both materials.