About the Visit

The Department of Materials Physics and Mechanics of the Institute of Physics at the University of São Paulo (DFMT/IFUSP) is hosting, until the end of May, Prof. Dr. Aleksandr Jaroshevich from the Institute of Semiconductor Physics in Novosibirsk, Russia. The visit, taking place from March 1 to May 31, 2026, is under the coordination of Prof. Dr. Gennady Gusev.

A specialist in quantum transport, Prof. Jaroshevich is the author of numerous publications on the electronic properties of quantum wells and topological insulators. His expertise is highly relevant to the activities of the Laboratory of New Semiconductor Materials at the Institute of Physics of USP (LNMS-IFUSP). The collaboration between DFMT/IFUSP and the Russian institute has already resulted in articles published in high-impact journals, such as Physical Review B and Physical Review Letters, as well as presentations at international conferences on two-dimensional systems, nanotechnology, and electronic transport under strong magnetic fields.

The focus of the visit is the project "Electron Hydrodynamics in 2D Mesoscopic Conductors: The Corbino Paradox", which experimentally investigates quantum transport and hydrodynamic effects in two-dimensional electron gases, including GaAs quantum wells. The project seeks to understand phenomena associated with electronic viscosity, the hydrodynamic transport regime, and the collective dynamics of electrons in mesoscopic conductors.

The objectives include identifying new physical phenomena, expanding knowledge about electronic transport in low-dimensional systems, and experimentally verifying existing theories. The results may contribute to the development of new fields and technological applications, such as vistronics/viscotronics, based on the control of electronic viscosity, as well as other advanced electronic devices.

This international partnership reinforces DFMT/IFUSP’s commitment to cutting-edge research in semiconductor physics, promoting fundamental and technological advances in quantum materials, electronic transport, and next-generation devices.