Artigos de Periódicos 1986

  1. ALVES, J L A ; LEITE, J. R. . Self-Consistent One-Electron States of Substitutional and Interstitial 5d-Transition Atom Impurities in Silicon. Physical Review B - Condensed Matter and Materials Physics, v. 34, p. 7174, 1986.
    doi: https://doi.org/10.1103/physrevb.34.7174
  2. ASSALI, L V C ; LEITE, J. R. . Comment on the Assali and Leite preceeding paper: Microscopic Mechanism of Hydrogen Passivation of Acceptor Shallow Levels in Silicon by DeLeo and Fowler. Physical Review Letters, v. 56, p. 403, 1986.
    doi: https://doi.org/10.1103/PhysRevLett.56.403
  3. ASSALI, L V C ; LEITE, J. R. . Electronic Structure of the Au-Mn Pair Complex in Silicon. Solid State Communications, v. 58, p. 577, 1986.
    doi: https://doi.org/10.1016/0038-1098(86)90222-X
  4. ASSALI, L V C ; LEITE, J. R. . Theoretical Model of Transition Metal-Shallow Acceptor Impurity pairs in Silicon. Materials Science Forum, v. 10-12, p. 55, 1986.
    doi: https://doi.org/10.4028/www.scientific.net/MSF.10-12.55
  5. CALDAS, M. J. ; FIGUEIREDO, S. ; FAZZIO, A. . Theoretical Investigation of the Electrical and Optical-Activity of Vanadium in GaAs. Physical Review B, v. 33, p. 7102-7109, 1986.
    doi: https://doi.org/10.1103/PhysRevB.33.7102
  6. CANUTO, S. ; FAZZIO, A. . Many-Electron Treatment of the Off-Center Substitutional O in Si. Physical Review B, v. R33, p. 4432, 1986.
    doi: https://doi.org/10.1103/PhysRevB.33.4432
  7. CHACHAM, H ; ALVES, J L A ; LEITE, J. R. ; SIQUEIRA, M L de . The Noble Gas Atoms as Impurities in Silicon. International Journal of Quantum Chemistry, v. S20, p. 347, 1986.
    doi: https://doi.org/10.1002/qua.560300732
  8. CONFORTO, E. ; RECHENBERG, H. R. ; JAFELICCI JR, M. . Mössbauer spectroscopic study of the early crystallization stage of iron (III) hydroxide particles. Journal of Physics and Chemistry of Solids, v. 47, p. 1179-1184, 1986.
    doi: https://doi.org/10.1016/0022-3697(86)90145-4
  9. FERRAZ, A. C. ; SRIVASTAVA, G P . The Atomic Geometry of ZnSe(110): Determinations by Total Energy Method. Journal of Physics. Condensed Matter, v. 19, p. 5987-5994, 1986.
    doi: https://doi.org/10.1088/0022-3719/19/30/010
  10. FERRAZ, A. C. ; SRIVASTAVA, G P . The Electronic Band Structure of (GaAs)n(AlAs)n Superlattices. Semiconductor Science and Technology, v. 1, p. 169-171, 1986.
    doi: https://doi.org/10.1088/0268-1242/1/3/004
  11. GOMES, V M S ; ASSALI, L V C ; LEITE, J. R. . Ab initio MO Electronic Structure Calculations of Defect-Pair Complexes in Silicon. International Journal of Quantum Chemistry, v. S20, p. 749, 1986.
    doi: https://doi.org/10.1002/qua.560300764
  12. GOMES, V M S ; LEITE, J. R. . Theoretical Investigation of Deep Level Complexes Related Carbon and Oxygen Impurities in Silicon. Materials Science Forum, v. 10-12, p. 905, 1986.
    doi: https://doi.org/10.4028/www.scientific.net/MSF.10-12.905
  13. LEITE, J. R. ; OLIVEIRA, G M G ; GOMES, V M S ; CHAVES, A S . The Behavior of Carriers in Quantum Wells in GaAs-AlxGa1-xAs Superlattices Under in-Plane Magnetic Fields. International Journal of Quantum Chemistry, v. S20, p. 335, 1986.
    doi: https://doi.org/10.1002/qua.560300733
  14. MAKIUCHI, N. ; FAZZIO, A. ; CALDAS, M. J. . Excitation and Ionization of Mo and W in GaAs. Physical Review B, v. 34, p. 2690-2694, 1986.
    doi: https://doi.org/10.1103/PhysRevB.34.2690
  15. MOTISUKE, P. ; IIKAWA, F. ; CALDAS, M. J. ; FAZZIO, A. ; PEREIRA NETO, J. R. . On the Evidence for the Effect of Local Symmetry on the Photoionization Spectrum of Fe2+ in InP. Materials Science Forum, v. 10-12, p. 687, 1986.
    doi: https://doi.org/10.4028/www.scientific.net/MSF.10-12.687
  16. PADUAN-FILHO, A. ; DROICHE, M. S. ; BECERRA, C. C. . Magnetic Transitions In The Intermediate Anisotropic Antiferromagnet Rb2MnBr4 · 2H2O. Journal of Magnetism and Magnetic Materials, v. 54, p. 699-700, 1986.
    doi: https://doi.org/10.1016/0304-8853(86)90216-7
  17. RECHENBERG, H. R. ; PADUAN-FILHO, A. ; MISSELL, F. P. ; DEPPE, P. ; ROSENBERG, M. . Magnetic properties and Mössbauer effect in R5Fe18B18 (R1+εFe4B4). Solid State Communications, v. 59, p. 541-543, 1986.
    doi: https://doi.org/10.1016/0038-1098(86)90054-2
  18. SCOLFARO, L M R ; PINTANEL, R ; GOMES, V M S ; LEITE, J. R. ; CHAVES, A S . Impurity Levels Induced by a C impurity in GaAs. Physical Review B, v. 34, p. 7135, 1986.
    doi: https://doi.org/10.1103/PhysRevB.34.7135
  19. SHAPIRA, Y. ; OLIVEIRA JR., N. F. ; RIDGLEY, D. H. ; KERSHAW, R. ; DWIGHT, K. ; WOLD, A. . Magneto Resistance and Hall Effect Near the Metal-Insulator Transition of Cd1-xMnxSe. Physical Review B, v. 34, p. 4187, 1986.
    doi: https://doi.org/10.1103/PhysRevB.34.4187